IXTH3N100P

IXTA3N100P IXTP3N100P IXTH3N100P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 1000V = 3A  4.8  TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 6 A IA TC = 25C 3 A EAS TC = 25C 200 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 125 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G D S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)   BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)  Characteristic Values Min. Typ. Max. V 4.5 V 50 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 5 250 A μA Applications    4.8    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99767B(6/18) IXTA3N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 1.5 Ciss Coss tr td(off) tf 2.4 S 1100 pF 70 pF 14.5 pF 22 ns 27 ns 75 ns 29 ns 36 nC 9 nC 13 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 18 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1.0 C/W RthJC RthCS IXTP3N100P IXTH3N100P TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 3 A ISM Repetitive, pulse Width Limited by TJM 9 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 3A, -di/dt = 100A/μs 820 ns VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA3N100P IXTP3N100P IXTH3N100P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 3.0 VGS = 10V 7V VGS = 10V 7V 5 4 6V 2.0 I D - Amperes I D - Amperes 2.5 1.5 1.0 0.5 3 6V 2 1 5V 5V 0.0 0 0 2 4 6 8 10 12 0 5 10 15 3.0 3.0 VGS = 10V 7V 30 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 2.0 6V 1.5 1.0 5V 0.5 2.2 I D = 3A 1.8 I D = 1.5A 1.4 1.0 0.6 0.0 0.2 0 4 8 12 16 20 24 -50 28 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 2.6 Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 2.4 VGS = 10V 2.8 o TJ = 125 C 2.2 2.4 2.0 I D - Amperes RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.5 20 VDS - Volts VDS - Volts 1.8 1.6 1.4 2.0 1.6 1.2 0.8 1.2 o TJ = 25 C 1.0 0.4 0.8 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 4.0 4.5 5.0 5.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA3N100P IXTP3N100P IXTH3N100P Fig. 8. Transconductance Fig. 7. Input Admittance 4.0 4.5 3.5 4.0 o 3.5 2.5 g f s - Siemens 3.0 I D - Amperes TJ = - 40 C o TJ = 125 C o 25 C o - 40 C 2.0 1.5 o 3.0 25 C 2.5 2.0 o 125 C 1.5 1.0 1.0 0.5 0.5 0.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 6.5 0.5 1.0 1.5 VGS - Volts 9 10 8 9 3.0 3.5 4.0 30 35 40 VDS = 500V I D = 1.5A 8 7 I G = 1mA 7 6 VGS - Volts I S - Amperes 2.5 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 5 4 o TJ = 125 C 3 6 5 4 3 o TJ = 25 C 2 2 1 1 0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0 0.9 5 10 VSD - Volts 15 20 25 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10 10,000 1ms f = 1 MHz 100μs 10ms RDS(on) Limit 1,000 I D - Amperes Capacitance - PicoFarads 2.0 I D - Amperes Ciss Coss 100 1 o TJ = 150 C o TC = 25 C Single Pulse Crss 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTA3N100P IXTP3N100P IXTH3N100P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N100P(3C) 04-03-08-A IXTA3N100P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP3N100P IXTH3N100P Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.