IXTH3N150

IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS(on)  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 9 A IA EAS TC = 25C TC = 25C 3 250 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 250 W TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g Weight G D Tab S G = Gate S = Source D = Drain Tab = Drain Features     International Standard Package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1500 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0  High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits V 100 nA TJ = 125C © 2013 IXYS CORPORATION, All Rights Reserved 10 A 100 A 7.3  DS100286C(10/13) IXTH3N150 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.2 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss TO-247 (IXTH) Outline 3.6 S 1375 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 90 pF 30 pF 3.0  RGI Gate Input Resistance td(on) Resistive Switching Times 19 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 21 ns 42 ns 25 ns 38.6 nC 6.5 nC 19.0 nC td(off) tf RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1 - Gate 2,4 - Drain 3 - Source 0.50 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 3 A Repetitive, Pulse Width Limited by TJM 12 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 1.5A, -di/dt = 100A/μs Note: 0.9 6.7 15 VR = 100V s C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH3N150 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 4.5 3.0 VGS = 10V 7V 4.0 VGS = 10V 6V 2.5 3.5 6V 2.0 I D - Amperes I D - Amperes 3.0 2.5 5.5V 2.0 1.5 5V 1.5 1.0 1.0 5V 0.5 0.5 4V 4V 0.0 0.0 0 4 8 12 16 20 24 28 32 0 5 10 15 20 25 30 35 40 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature 3.0 2.6 VGS = 10V 2.6 VGS = 10V 2.4 TJ = 125ºC I D = 3A 2.2 RDS(on) - Normalized RDS(on) - Normalized 2.2 I D = 1.5A 1.8 1.4 1.0 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 0.6 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 TJ - Degrees Centigrade 2.0 2.5 3.0 3.5 4.0 4.5 I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 3.5 3.0 3.0 2.5 2.5 I D - Amperes I D - Amperes 2.0 2.0 1.5 1.5 TJ = 125ºC 25ºC - 40ºC 1.0 1.0 0.5 0.5 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 100 125 150 3.2 3.6 4.0 4.4 4.8 VGS - Volts 5.2 5.6 6.0 IXTH3N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 9 7 TJ = - 40ºC 8 6 7 6 25ºC I S - Amperes g f s - Siemens 5 4 3 125ºC 5 4 TJ = 125ºC 3 2 TJ = 25ºC 2 1 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.3 3.5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD - Volts I D - Amperes Fig. 9. Gate Charge Fig. 10. Capacitance 10,000 10 VDS = 750V f = 1 MHz I D = 1.5A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 C iss 1,000 C oss 100 2 Crss 0 10 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Fig. 12. Forward-Bias Safe Operating Area 10 1 RDS(on) Limit 25µs I D - Amperes Z (th)JC - ºC / W 100µs 1 0.1 1ms 10ms 100ms 0.1 DC TJ = 150ºC TC = 25ºC Single Pulse 0.01 0.00001 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds 10 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_3N150(4N)10-26-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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