IXTH3N200P3HV

Advance Technical Information IXTT3N200P3HV IXTH3N200P3HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 2000V = 3A   8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000 V VDGR TJ = 25C to 150C, RGS = 1M 2000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 3.0 A ID110 TC = 110C 2.6 A IDM TC = 25C, Pulse Width Limited by TJM 9.0 A PD TC = 25C 520 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight TO-268HV TO-247HV G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features   High Blocking Voltage High Voltage Packages Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 2000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 1.5A, Note 1 5.0 V Applications V  100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved 10 A 250 μA 8 Easy to Mount Space Savings High Power Density    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems  DS100687(8/15) IXTT3N200P3HV IXTH3N200P3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 1.5A, Note 1 2.3 Ciss Coss TO-268HV Outline E 3.8 S 1860 pF 133 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 58 3 e Gate Input Resistance 3.8 td(on) Resistive Switching Times 21 ns PINS: 1 - Gate 2 - Source 3 - Drain 27 ns L3 67 ns 60 ns 70 nC 8 nC 39 nC td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd D3 1 b A2 L 0.24 °C/W RthJC RthCS D1 2 C RGi tr 3 D2 A1 L4  E1 H 2 e A C2 D 1 pF  L2 TO-247HV 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM Note: 3 A 12 A 1.5 V 420 IF = 1.5A, -di/dt = 100A/s 380 VR = 100V, VGS = 0V TO-247HV Outline E R 0P A A2 D1 D 4 ns  nC 1.8 D2 1 2 3 L1 D3 A L e 1. Pulse test, t  300s, duty cycle, d  2%. E1 0P1 Q S e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 3X ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTT3N200P3HV IXTH3N200P3HV Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 3.0 4.5 VGS = 10V VGS = 10V 4.0 6V 2.5 7V 3.5 2.0 I D - Amperes I D - Amperes 3.0 2.5 2.0 6V 1.5 1.5 1.0 5V 1.0 0.5 0.5 5V 4V 0.0 0.0 0 10 20 30 40 50 60 0 20 30 40 50 60 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 70 2.8 3.4 VGS = 10V 2.6 VGS = 10V 3.0 10 VDS - Volts TJ = 125ºC 2.4 RDS(on) - Normalized RDS(on) - Normalized 2.6 I D = 3.0A 2.2 I D = 1.5A 1.8 1.4 2.2 2.0 1.8 1.6 1.4 1.0 TJ = 25ºC 1.2 0.6 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 0.0 150 0.5 1.0 1.5 Fig. 5. Maximum Drain Current vs. Case Temperature 3.5 2.5 3.0 3.5 4.0 4.5 Fig. 6. Input Admittance 4.0 3.5 3.0 3.0 I D - Amperes 2.5 I D - Amperes 2.0 I D - Amperes TJ - Degrees Centigrade 2.0 1.5 1.0 2.5 TJ = 125ºC 2.0 25ºC 1.5 -40ºC 1.0 0.5 0.5 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2015 IXYS CORPORATION, All Rights Reserved 100 125 150 3.5 4.0 4.5 5.0 5.5 VGS - Volts 6.0 6.5 7.0 IXTT3N200P3HV IXTH3N200P3HV Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 8 9 7 8 TJ = - 40ºC 7 5 25ºC 4 125ºC 6 I S - Amperes g f s - Siemens 6 3 5 4 TJ = 125ºC 3 TJ = 25ºC 2 2 1 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.3 0.4 0.5 0.6 I D - Amperes Fig. 9. Gate Charge 0.8 0.9 Fig. 10. Capacitance 10,000 10 f = 1 MHz VDS = 1kV Capacitance - PicoFarads I D = 1.5A 8 V GS - Volts 0.7 VSD - Volts I G = 10mA 6 4 Ciss 1,000 Coss 100 2 Crss 10 0 0 10 20 30 40 50 60 0 70 Fig.5 12. Maximum Thermal Impedance 10 15Transient 20 25 30 35 1 QG - NanoCoulombs 40 VDS - Volts Fig. 12 Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area aaaa 0.4 10 25µs 100µs Z(th)JC - ºC / W 1ms RDS(on) Limit I D - Amperes 1 0.1 10ms 0.1 100ms TJ = 150ºC DC TC = 25ºC Single Pulse 0.01 100 1,000 10,000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_3N200P3HV (H7-AT653) 8-20-15 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.