IXTH40N30

MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS(on) 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS Continuous VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM PD TC = 25°C TJM 35N30 40N30 V 300 V ±20 V ±30 V 35 40 A A 140 160 A A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C O T stg Mounting torque Weight 300 D G = Gate, S = Source, G D = Drain, TAB = Drain 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g °C 300 BS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions O Symbol D (TAB) TO-204 AE (IXTM) LE 35N30 40N30 TJ Md TO-247 AD (IXTH) TE Symbol l l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 TJ = 25°C TJ = 125°C IXTH35N30 IXTH40N30 IXTM40N30 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Features V 4 V ±100 nA 200 1 µA mA 0.10 0.085 0.088 Ω Ω Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91535E(5/96) 1-4 IXTH 35N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 22 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss S 4600 pF 650 pF 240 pF 24 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 40 90 ns td(off) RG = 2 Ω, (External) 75 100 ns 40 90 ns 190 220 nC 28 50 nC 85 105 nC 0.42 K/W tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC R thCK Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 35 40 A A 35N30 40N30 140 160 A A 1.5 V BS O 35N30 40N30 IF = IS, -di/dt = 100 A/µs, VR = 100 V O t rr K/W LE 0.25 Source-Drain Diode TO-247 AD (IXTH) Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain TE t d(on) 25 IXTH 40N30 IXTM 40N30 400 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline ns Pins Dim. A A1 ∅b ∅D e e1 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 L 11.18 12.19 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 2-4 IXTH 35N30 Fig. 1 Output Characteristics 80 Fig. 2 Input Admittance 80 8V 7V VGS = 10V 70 70 TJ = 25°C 60 ID - Amperes 50 6V 40 30 TJ = 25°C 40 30 20 5V 10 10 0 0 0 2 4 6 8 10 12 14 VDS - Volts 0 1 2 3 4 5 6 7 8 9 10 VGS - Volts Fig. 4 Temperature Dependence of Drain to Source Resistance LE Fig. 3 RDS(on) vs. Drain Current 2.0 2.50 TJ = 25°C 2.25 1.8 RDS(on) - Normalized 50 TE 20 1.6 1.4 VGS = 10V O 1.2 VGS = 15V 1.0 0.8 0 20 40 60 80 100 2.00 1.75 1.50 1.00 0.50 -50 120 -25 0 ID - Amperes O 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 50 BVDSS VGS(th) 1.1 BV/VG(th) - Normalized 40N30 35N30 30 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 40 ID = 20A 1.25 0.75 BS 0.6 RDS(on) - Normalized ID - Amperes 60 ID - Amperes IXTH 40N30 IXTM 40N30 20 10 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 35N30 Fig.7 Gate Charge Characteristic Curve IXTH 40N30 IXTM 40N30 Fig.8 Forward Bias Safe Operating Area 10 VDS = 150V 10µs 100 Limited by RDS(on) ID = 21A 8 ID - Amperes 6 4 0 1ms 10 10ms 100ms 1 0 25 50 75 100 125 150 175 200 1 Gate Charge - nCoulombs 300 100 Fig.10 Source Current vs. Source to Drain Voltage LE 4500 10 VDS - Volts Fig.9 Capacitance Curves 80 Ciss 70 4000 60 3500 f = 1 MHz VDS = 25V 3000 2500 2000 O Capacitance - pF 100µs TE 2 1500 1000 500 0 5 50 40 TJ = 25°C 20 Crss 10 10 15 20 25 TJ = 125°C 30 Coss BS 0 ID - Amperes VGE - Volts IG = 10mA 0 0.0 0.2 Vds - Volts 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W O 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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