IXTH420N04T2

Advance Technical Information IXTH420N04T2 TrenchT2TM Power MOSFET VDSS ID25 RDS(on) = 40V = 420A Ω ≤ 2.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient ± 20 V ID25 TC = 25°C (Chip Capability) 420 A ILRMS Lead Current Limit, RMS IDM TC = 25°C, Pulse Width Limited by TJM IA 160 A 1050 A TC = 25°C 200 A EAS TC = 25°C 960 mJ PD TC = 25°C 935 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque Weight G D = Drain TAB = Drain Features z International Standard Package 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z Advantages z z Easy to Mount Space Savings High Power Density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 1.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V V VGS = 10V, ID = 100A, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved Applications 3.5 V ±200 nA z 10 μA z z DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 300 μA TJ = 150°C RDS(on) (TAB) S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D 1.6 2.0 mΩ DS100170(7/09) IXTH420N04T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 70 TO-247 (IXTH) Outline 120 S 19.7 nF 3220 pF 690 pF 1.45 Ω 23 ns 27 ns 70 ns tf 155 ns Qg(on) 315 nC 68 nC 73 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 2Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 °C/W RthJC RthCH °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM QRM 74 -di/dt = 100A/μs VR = 20V 420 A 1680 A 1.3 V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns 2.7 A 100 nC Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH420N04T2 Fig. 1. Output Characteristics @ 25ºC 350 Fig. 2. Extended Output Characteristics @ 25ºC 350 VGS = 15V 10V 8V 7V 300 250 250 ID - Amperes ID - Amperes VGS = 10V 8V 6V 300 6V 200 150 5V 5V 200 150 100 100 4V 50 50 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.8 1.0 2.0 3.0 5.0 6.0 7.0 Fig. 4. RDS(on) Normalized to ID = 210A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 2.0 350 VGS = 15V 10V 8V 7V 300 VGS = 10V 1.8 R DS(on) - Normalized 250 ID - Amperes 4.0 VDS - Volts VDS - Volts 6V 200 5V 150 100 4V 1.6 I D = 320A I D = 210A 1.4 1.2 1.0 0.8 50 3V 0.6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 1.0 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 210A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.0 External Lead Current Limit 160 140 TJ = 175ºC 120 1.6 ID - Amperes R DS(on) - Normalized 1.8 VGS = 10V 1.4 15V - - - - - 100 80 60 1.2 TJ = 25ºC 40 1.0 20 0 0.8 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH420N04T2 Fig. 8. Transconductance Fig. 7. Input Admittance 240 200 TJ = - 40ºC 180 200 160 g f s - Siemens ID - Amperes 140 120 100 80 60 TJ = 150ºC 25ºC - 40ºC 40 25ºC 160 150ºC 120 80 40 20 0 0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 20 40 60 80 Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 180 200 Fig. 10. Gate Charge VDS = 20V 9 300 I D = 210A 8 250 I G = 10mA VGS - Volts 7 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 40 80 120 160 200 240 280 320 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100,000 f = 1 MHz TJ = 175ºC TC = 25ºC Single Pulse RDS(on) Limit Ciss 10,000 1,000 ID - Amperes Capacitance - PicoFarads 160 10 350 IS - Amperes 100 ID - Amperes VGS - Volts Coss 25µs 100µs External Lead Current Limit 100 1,000 1ms Crss 10ms DC 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100ms 100 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_420N04T2(V8)7-15-09 IXTH420N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 36 36 RG = 2Ω 34 RG = 2Ω VGS = 10V VGS = 10V 34 VDS = 20V 32 t r - Nanoseconds t r - Nanoseconds VDS = 20V 30 28 I D 26 = 100A I D TJ = 125ºC 32 30 28 = 200A 26 24 TJ = 25ºC 24 22 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 320 td(on) - - - - tf 200 200 200 60 160 50 120 40 80 30 t f - Nanoseconds 70 100 VDS = 20V 160 90 I D = 100A 120 80 80 70 I D = 200A 40 40 60 20 0 0 10 2 4 6 8 10 12 14 25 16 35 45 55 RG - Ohms 110 120 90 TJ = 125ºC, 25ºC 0 100 120 50 125 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 td(off) - - - 500 VDS = 20V 400 400 I D = 100A, 200A 300 300 200 200 70 100 100 60 200 0 80 40 80 115 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds 160 60 105 TJ = 125ºC, VGS = 10V 500 t f - Nanoseconds RG = 2Ω, VGS = 10V VDS = 20V 40 95 600 tf td(off) - - - - 80 85 600 120 200 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 240 tf 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds t d(off) - Nanoseconds 240 td(off) - - - - RG = 2Ω, VGS = 10V 80 I D = 200A, 100A t d(on) - Nanoseconds t r - Nanoseconds 180 110 90 VDS = 20V 160 240 TJ = 125ºC, VGS = 10V 280 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 360 tr 120 ID - Amperes IXTH420N04T2 Fig. 19. Maximum Transient Thermal Impedance 1.00 Fig. 19. Maximum Transient Thermal Impedance 0.20 Z (th)JC - ºC / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_420N04T2(V8)7-15-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.