IXTH450P2

IXTP450P2 IXTQ450P2 IXTH450P2 Polar2TM Power MOSFETs VDSS ID25 = = ≤ = RDS(on) trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 16 48 A A IA EAS TC = 25°C TC = 25°C 16 750 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 3.0 5.5 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight TO-220 TO-3P TO-247 Tab TO-3P (IXTQ) Symbol TJ TJM Tstg DS G D S Tab TO-247(IXTH) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 30V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V 5 μA 25 μA RDS(on) z z TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 V 4.5 V 330 mΩ Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100241A(10/11) IXTP450P2 IXTQ450P2 IXTH450P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 12 Ciss Coss 20 S 2280 pF 257 pF 30 pF 16 ns 10 ns 50 ns 18 ns 43 nC 18 nC 11 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS RthCS TO-3P Outline 0.42 °C/W TO-220 TO-3P & TO-247 0.50 0.25 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IF = 16A, -di/dt = 100A/μs VR = 100V, VGS = 0V 400 TO-247 Outline ns 1 2 ∅P 3 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e Terminals: 1 - Gate 3 - Source TO-220 Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1 - Gate 2 - Drain 3 - Source 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP450P2 IXTQ450P2 IXTH450P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 16 50 VGS = 10V 7V 14 VGS = 10V 7V 45 40 12 35 ID - Amperes ID - Amperes 6V 10 8 6 30 25 20 6V 15 4 10 2 5 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 16 3.2 VGS = 10V 6V 14 VGS = 10V 2.8 R DS(on) - Normalized ID - Amperes 12 10 8 6 5V 4 2.4 I D = 16A 2.0 I D = 8A 1.6 1.2 0.8 2 4V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 25 VDS - Volts 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.6 18 VGS = 10V 16 TJ = 125ºC 3.2 12 ID - Amperes R DS(on) - Normalized 14 2.8 2.4 2.0 TJ = 25ºC 10 8 6 1.6 4 1.2 2 0.8 0 0 5 10 15 20 25 30 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 35 40 45 50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTP450P2 IXTQ450P2 IXTH450P2 Fig. 7. Input Admittance Fig. 8. Transconductance 40 50 TJ = - 40ºC 35 40 TJ = 125ºC 25ºC - 40ºC 25 g f s - Siemens ID - Amperes 30 20 15 25ºC 30 125ºC 20 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 VGS - Volts 20 25 30 35 40 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 10 45 9 VDS = 250V 40 8 I G = 10mA 35 7 VGS - Volts IS - Amperes I D = 8A 30 25 20 6 5 4 TJ = 125ºC 15 3 TJ = 25ºC 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 VSD - Volts 15 20 25 30 35 40 45 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 RDS(on) Limit 25µs 100µs 1,000 10 ID - Amperes Capacitance - PicoFarads Ciss Coss 100 1 Crss TJ = 150ºC 1ms TC = 25ºC Single Pulse f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTP450P2 IXTQ450P2 IXTH450P2 Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: T_450P2(5J-N45) 10-17-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.