IXTH48N65X2

IXTH48N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 650V = 48A  65m  TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 48 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA TC = 25C 20 A TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 660 W -55 ... +150 C  TJM 150 C  Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight 6 g S G = Gate S = Source EAS TJ D D (Tab) D = Drain Tab = Drain Features   International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V   5.0 V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 200 A 65 m DS100676B(4/18) IXTH48N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 24 RGi Gate Input Resistance 40 S 1.2  D A A2 A2 + R 4300 pF 3280 pF 6.4 pF 150 665 pF pF 19 ns 26 ns 50 ns 15 ns 76 nC 22 nC 28 nC Crss S D2 + D1 D VGS = 0V, VDS = 25V, f = 1MHz A + 0K M D B M 0P O B E Q Ciss Coss TO-247 (IXTH) Outline 0P1 1 2 3 4 ixys option L1 C E1 L Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source 0.19 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 48 A Repetitive, pulse Width Limited by TJM 192 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 24A, -di/dt = 100A/μs 400 6 30 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTH48N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 48 140 VGS = 10V 8V 40 7V I D - Amperes I D - Amperes 32 24 120 VGS = 10V 9V 100 8V 80 60 7V 6V 16 40 8 6V 20 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 48 3.4 VGS = 10V 8V 2.6 RDS(on) - Normalized 7V 32 6V 24 VGS = 10V 3.0 40 I D - Amperes 15 VDS - Volts 16 I D = 48A 2.2 1.8 I D = 24A 1.4 1.0 8 5V 0.6 0.2 0 0 4.5 1 2 3 4 6 7 -50 8 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 5 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.5 0.6 0 20 40 60 80 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 100 120 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH48N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 56 90 80 48 70 40 I D - Amperes I D - Amperes 60 32 24 16 o TJ = 125 C o 25 C o - 40 C 50 40 30 20 8 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 80 160 o TJ = - 40 C 70 140 60 120 o 50 I S - Amperes g f s - Siemens 25 C o 125 C 40 30 100 80 o TJ = 125 C 60 o 20 40 10 20 0 TJ = 25 C 0 0 10 20 30 40 50 60 70 80 0.3 90 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V V GS - Volts Capacitance - PicoFarads I D = 24A 8 I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTH48N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 35 1000 RDS(on) Limit 100 25 25μs I D - Amperes E OSS - MicroJoules 30 20 15 10 100μs 10 1 o TJ = 150 C o TC = 25 C Single Pulse 5 0 1ms 10ms 0.1 0 100 200 300 400 VDS - Volts 1 500 600 10 Fig. 15. Maximum Transient Thermal Impedance 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_48N65X2 (X6-S602) 1-06-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.