IXTH4N150

IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS(on) ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 4 A IDM TC = 25°C, Pulse Width Limited by TJM 12 A IA EAS TC = 25°C TC = 25°C 4 350 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 280 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque Weight G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z International Standard Package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z z z Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z V 5.0 z High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits V ±100 nA TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 10 μA 100 μA 6 Ω DS100287B(10/12) IXTH4N150 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.8 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 4.6 S 1576 pF 105 pF 35 pF 19 ns 23 ns 42 ns 22 ns 44.5 nC 7.7 nC 21.7 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-247 (IXTH) Outline 0.45 °C/W RthJC RthCS 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IF = 0.5 • ID25, -di/dt = 100A/μs IRM QRM Note: VR = 100V, VGS = 0V 0.9 μs 15.0 A 6.7 μC 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH4N150 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Output Characteristics @ T J = 125ºC 5 3.5 VGS = 10V 7V 4.5 VGS = 10V 6V 3 4 6V 2.5 ID - Amperes ID - Amperes 3.5 3 2.5 2 1.5 2 5V 1.5 1 1 5V 0.5 0.5 4V 4V 0 0 0 4 8 12 16 20 24 0 28 5 10 15 20 35 Fig. 3. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Drain Current 40 2.6 VGS = 10V VGS = 10V 2.4 2.6 TJ = 125ºC 2.2 R DS(on) - Normalized 2.2 I D = 4A 1.8 I D = 2A 1.4 1.0 2.0 1.8 1.6 1.4 1.2 0.6 TJ = 25ºC 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 4.5 4.5 4 4 3.5 3.5 3 3 ID - Amperes ID - Amperes 30 VDS - Volts 3.0 R DS(on) - Normalized 25 VDS - Volts 2.5 2 2.5 TJ = 125ºC 2 25ºC 1.5 1.5 1 1 0.5 0.5 - 40ºC 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved 100 125 150 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 IXTH4N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 9 14 8 12 TJ = - 40ºC 7 IS - Amperes g f s - Siemens 10 6 25ºC 5 4 125ºC 8 6 TJ = 125ºC 3 4 2 TJ = 25ºC 2 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.4 0.5 0.6 0.7 ID - Amperes 0.9 1.0 Fig. 10. Capacitance Fig. 9. Gate Charge 10 10,000 f = 1 MHz VDS = 750V I D = 2A 8 I G = 10mA Capacitance - PicoFarads VGS - Volts 0.8 VSD - Volts 6 4 1,000 Ciss Coss 100 2 Crss 0 10 0 5 10 15 20 25 30 35 40 45 0 5 10 15 QG - NanoCoulombs 20 25 30 35 40 VDS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward-Bias Safe Operating Area 1.2 100 1.1 BVDSS 1 0.9 VGS(th) TC = 25ºC Single Pulse RDS(on) Limit 10 ID - Amperes BVDSS & VGS(th) - Normalized TJ = 150ºC 25µs 100µs 1 1ms 10ms 100ms 0.1 0.8 DC 0.01 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1000 VDS - Volts 10000 IXTH4N150 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N150(4A)9-12-12-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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