IXTH50N20

MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 Ω RDS(on) = 45 mΩ N-Channel Enhancement Mode Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS Continuous VGSM Transient ID25 T C = 25°C IDM T C = 25°C, pulse width limited by TJM PD T C = 25°C TJ TJM T stg V V ±20 V ±30 V 50 A 200 A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. O Mounting torque Md 200 200 Weight TO-204 = 18 g, TO-247 = 6 g Test Conditions O Symbol l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 200 VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V V l l V ±100 nA TJ = 25°C TJ = 125°C 200 1 µA mA l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.045 Ω l © 2000 IXYS All rights reserved D = Drain, TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications 4 IXYS reserves the right to change limits, test conditions, and dimensions. G Features l VGS(th) R DS(on) G = Gate, S = Source, l VDSS D °C 300 BS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s D (TAB) TO-204 AE (IXTM) LE VDSS VDGR TO-247 AD (IXTH) TE Symbol l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91534F(5/97) 1-4 IXTH 50N20 IXTM 50N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 20 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss S 4600 pF 800 pF 285 pF 18 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 15 20 ns td(off) RG = 2 Ω, (External) 72 90 ns 16 25 ns 190 220 nC 35 50 nC 95 110 nC 0.42 K/W tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC R thCK Symbol Test Conditions IS VGS = 0 V ISM 50 A Repetitive; pulse width limited by TJM 200 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 O 50N20 IF = IS, -di/dt = 100 A/µs, VR = 100 V O t rr 3 2 - Drain Tab - Drain Dim. K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BS VSD 2 Terminals: 1 - Gate 3 - Source LE 0.25 Source-Drain Diode 1 TE td(on) 32 TO-247 AD (IXTH) Outline Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline 400 V ns Pins Dim. A A1 ∅b ∅D e e1 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 L 11.18 12.19 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 2-4 IXTH 50N20 IXTM 50N20 Fig. 1 Output Characteristics 100 TJ = 25°C 90 100 VGS = 10V 90 9V 8V 7V 80 60 6V 50 40 30 60 TJ = 25°C 50 40 30 20 20 5V 10 10 0 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts 0 1 2 3 5 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance LE 125 2.50 TJ = 25°C 100 75 O VGS = 10V VGS = 15V RDS(on) - Normalized 2.25 25 50 75 1.75 1.50 ID = 40A 1.25 0.75 25 0 2.00 1.00 BS 50 100 125 150 175 200 -50 -25 0 ID - Amperes O BV/VG(th) - Normalized 1.1 40 50N20 42N20 30 20 100 125 150 BVCES VGS(th) 1.0 0.9 0.8 0.7 0.6 10 0 -50 75 1.2 70 50 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 80 60 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current RDS(on) - mOhms 70 TE 70 ID - Amperes 80 ID - Amperes Fig. 2 Input Admittance -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 50N20 IXTM 50N20 Fig.7 Gate Charge Characteristic Curve 14 10µs VDS = 100V ID = 50A IG = 10mA 12 100µs 100 Limited by R DS(on) 10 ID - Amperes VGE - Volts Fig.8 Forward Bias Safe Operating Area 8 6 1ms 10ms 10 100ms TE 4 2 0 1 0 25 50 75 1 100 125 150 175 200 Fig.10 Source Current vs. Source to Drain Voltage LE Fig.9 Capacitance Curves 50 Ciss 4000 f = 1 MHz VDS = 25V 3000 2000 Coss 1500 1000 Crss 500 BS 0 O 2500 0 5 10 15 20 ID - Amperes 40 3500 Capacitance - pF 100 VDS - Volts Gate Charge - nCoulombs 4500 10 30 20 TJ = 25°C 10 0 0.2 25 TJ = 125°C 0.4 VDS - Volts 0.6 0.8 1.0 VSD - Volts Thermal Response - K/W O Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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