IXTH52N65X

IXTH52N65X X-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 52A  68m  N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 52 A IDM TC = 25C, Pulse Width Limited by TJM 104 A PD TC = 25C 660 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque G Tab S G = Gate S = Source D = Drain Tab = Drain Features  Weight D   International Standard Package Low RDS(ON) and QG Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 5.0 Applications V  V  100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 10 A 100 A    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 68 m DS100604D(6/15) IXTH52N65X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 25 RGi Gate Input Resistance S  1.1 D A A2 4350 Q VGS = 0V, VDS = 25V, f = 1MHz pF 3300 pF 120 pF Crss td(on) tr td(off) tf Energy related Time related D2 D1 P1 1 2 4 3 L1 C E1 L 204 673 VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs S D Effective Output Capacitance Co(er) Co(tr) A B E R Ciss Coss 42 TO-247 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd pF pF 26 ns 57 ns 63 ns 16 ns 113 nC 25 nC 57 nC A1 C b b2 b4 e 1 - Gate 2,4 - Drain 3 - Source 0.19 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 52 A Repetitive, pulse Width Limited by TJM 208 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 26A, -di/dt = 100A/μs 435 9.8 46 VR = 100V ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTH52N65X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 140 VGS = 10V 8V 50 VGS = 10V 9V 120 7V 8V 100 I D - Amperes I D - Amperes 40 30 20 80 7V 60 40 6V 10 20 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.4 VGS = 10V 8V 50 2.6 40 7V RDS(on) - Normalized I D - Amperes VGS = 10V 3.0 30 6V 20 I D = 52A 2.2 1.8 I D = 26A 1.4 1.0 10 0.6 5V 0.2 0 0 1 2 3 4 5 6 7 8 -50 9 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 4.5 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 4.0 TJ = 125ºC 3.5 RDS(on) - Normalized -25 VDS - Volts 3.0 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 100 120 140 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH52N65X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 80 60 70 50 60 I D - Amperes I D - Amperes 40 30 50 TJ = 125ºC 25ºC - 40ºC 40 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 80 160 TJ = - 40ºC 70 140 60 120 25ºC 50 I S - Amperes g f s - Siemens 5.5 VGS - Volts 125ºC 40 30 100 80 60 TJ = 125ºC 20 40 10 20 TJ = 25ºC 0 0 0 10 20 30 40 50 60 70 80 90 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 1.1 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 325V Capacitance - PicoFarads I D = 26A 8 I G = 10mA 7 VGS - Volts 0.7 VSD - Volts 6 5 4 3 2 10,000 C iss 1,000 C oss 100 C rss 10 f = 1 MHz 1 0 1 0 10 20 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTH52N65X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 45 40 RDS(on) Limit 100 25µs 30 I D - Amperes EOSS - MicroJoules 35 25 20 100µs 10 15 1ms 1 10 TJ = 150ºC 10ms 100ms TC = 25ºC Single Pulse 5 DC 0 0.1 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_52N65X(I8-R4T4) 6-17-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.