IXTH62N65X2

IXTH62N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 650V = 62A  50m  TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 62 A IDM TC = 25C, Pulse Width Limited by TJM 124 A IA TC = 25C 10 A TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 780 W -55 ... +150 C  TJM 150 C  Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight 6 g S G = Gate S = Source EAS TJ D D (Tab) D = Drain Tab = Drain Features   International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 2.7 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V   5.0 V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 25 A 300 A 50 m DS100679B(4/18) IXTH62N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 25 RGi Gate Input Resistance 56 S 0.9  D A A2 A2 + R 5800 pF 4260 pF 2.3 pF 210 890 pF pF 28 ns 11 ns 56 ns 5 ns 100 nC 28 nC 35 nC Crss S D2 + D1 D VGS = 0V, VDS = 25V, f = 1MHz A + 0K M D B M 0P O B E Q Ciss Coss TO-247 (IXTH) Outline 0P1 1 2 3 4 ixys option L1 C E1 L Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source 0.16 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 62 A Repetitive, Pulse Width Limited by TJM 248 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 31A, -di/dt = 100A/μs 445 8.2 36.7 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTH62N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 180 VGS = 10V 8V 60 VGS = 10V 160 7V 50 140 8V 30 I D - Amperes I D - Amperes 120 40 6V 7V 100 80 60 20 6V 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 VDS - Volts 3.8 VGS = 10V 7V 30 VGS = 10V 3.4 3.0 50 RDS(on) - Normalized 6V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 31A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 60 20 VDS - Volts 40 30 20 5V 2.6 I D = 62A 2.2 I D = 31A 1.8 1.4 1.0 10 0.6 4V 0.2 0 0 4.0 1 2 3 4 5 6 7 8 -50 9 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.2 VGS = 10V 3.5 1.1 o BVDSS / VGS(th) - Normalized TJ = 125 C RDS(on) - Normalized -25 VDS - Volts 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 20 40 60 80 100 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 120 140 160 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH62N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 70 90 80 60 70 50 I D - Amperes I D - Amperes 60 40 30 20 o TJ = 125 C 50 o 25 C o - 40 C 40 30 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 100 200 o TJ = - 40 C 90 180 80 160 140 25 C I S - Amperes g f s - Siemens 70 o 60 o 125 C 50 40 120 100 80 60 20 40 10 20 0 o TJ = 125 C 30 o TJ = 25 C 0 0 10 20 30 40 50 60 70 80 90 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V I D = 31A 10,000 Capacitance - PicoFarads V GS - Volts 8 I G = 10mA 6 4 2 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 10 20 30 40 50 60 70 80 90 100 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTH62N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 45 1000 40 RDS(on) Limit 100 25μs 30 I D - Amperes EOSS - MicroJoules 35 25 20 100μs 10 1ms 15 1 10 o TJ = 150 C 10ms o TC = 25 C Single Pulse 5 0 0.1 0 100 200 300 400 VDS - Volts 500 600 10 Fig. 15. Maximum Transient Thermal Impedance 100 1,000 VDS - Volts 1 Fig. 15. Maximum Transient Thermal Impedance aaaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_62N65X2(X7-S602) 10-08-15 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.