IXTH64N65X

Preliminary Technical Information IXTH64N65X X-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 64A  51m  N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 64 A IDM TC = 25C, Pulse Width Limited by TJM 128 A PD TC = 25C 890 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G D Tab S G = Gate S = Source D = Drain Tab = Drain Features    International Standard Package Low RDS(ON) and QG Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings V 5.0 V Applications 100 nA  10 A 100 A    51 m  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100618C(6/15) IXTH64N65X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance 52 S  1.5 D A A2 5500 Q VGS = 0V, VDS = 25V, f = 1MHz pF 4090 pF 80 pF Crss td(on) tr td(off) tf Energy related Time related D2 D1 P1 1 2 4 3 L1 C E1 L 257 834 VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs S D Effective Output Capacitance Co(er) Co(tr) A B E R Ciss Coss TO-247 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd pF pF 22 ns 25 ns 80 ns 28 ns 143 nC 29 nC 70 nC A1 C b b2 b4 e 1 - Gate 2,4 - Drain 3 - Source 0.14 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 64 A Repetitive, pulse Width Limited by TJM 256 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 32A, -di/dt = 100A/μs 450 10 44 VR = 100V ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTH64N65X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 70 180 VGS = 10V 8V 60 VGS = 10V 9V 160 140 8V 7V 120 I D - Amperes I D - Amperes 50 40 30 100 80 7V 60 20 6V 40 10 20 5V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 70 3.4 VGS = 10V 8V 60 VGS = 10V 3.0 2.6 RDS(on) - Normalized 7V 50 I D - Amperes 20 VDS - Volts 40 6V 30 20 I D = 64A 2.2 1.8 I D = 32A 1.4 1.0 10 0.6 5V 0.2 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.0 150 1.3 VGS = 10V 3.5 1.2 BVDSS / VGS(th) - Normalized RDS(on) - Normalized TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 0.5 VGS(th) 0.6 0 20 40 60 80 100 120 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 140 160 180 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH64N65X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 70 90 80 60 70 50 I D - Amperes I D - Amperes 60 40 30 50 40 TJ = 125ºC 25ºC - 40ºC 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 90 200 180 70 160 25ºC 60 50 140 I S - Amperes g f s - Siemens TJ = - 40ºC 80 125ºC 40 120 100 80 TJ = 125ºC 30 60 20 TJ = 25ºC 40 10 20 0 0 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V Capacitance - PicoFarads I D = 32A 8 VGS - Volts I G = 10mA 6 4 10,000 C iss 1,000 Coss 100 2 Crss f = 1 MHz 10 0 0 20 40 60 80 100 120 140 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTH64N65X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 50 45 RDS(on) Limit 40 ID - Amperes EOSS - MicroJoules 100 35 30 25 20 25µs 100µs 10 15 1ms 1 TJ = 150ºC 10 TC = 25ºC Single Pulse 5 0 10ms 100ms DC 0.1 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_64N65X(J8-R4T4) 6-17-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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