IXTH6N100D2

IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID(on) = >  RDS(on) 1000V 6A 2.2  N-Channel D TO-263 AA (IXTA) G G S D (Tab) S TO-220AB (IXTP) Symbol Test Conditions VDSX TJ = 25C to 150C VGSX Maximum Ratings 1000 V Continuous 20 V VGSM Transient 30 V PD TC = 25C 300 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1000 VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 2.5 - 4.5 • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification V Advantages V • Easy to Mount • Space Savings • High Power Density 100 nA 5 A 50 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 2.2 6  A Applications • • • • • • Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100183C(4/17) IXTA6N100D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 3A, Note 1 2.6 Ciss Coss td(on) tr td(off) tf S 2650 pF 167 pF 41 pF 25 ns 80 ns 34 ns 47 ns 95 nC 11 nC 51 nC 0.50 0.21 0.41 C/W C/W C/W VGS = -10V, VDS = 25V, f = 1MHz Resistive Switching Times VGS = 5V, VDS = 500V, ID = 3A RG = 2.4 (External) Qg(on) Qgs VGS = 5V, VDS = 500V, ID = 3A Qgd RthJC RthCS TO-220 TO-247 TO-220 (IXTP) Outline 4.2 Crss IXTP6N100D2 IXTH6N100D2 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 800V, ID = 225mA, TC = 75C, Tp = 5s 180 W TO-247 (IXTH) AD Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VSD IF = 6A, VGS = -10V, Note 1 0.8 trr IRM QRM IF = 3A, -di/dt = 100A/s VR = 100V, VGS = -10V 952 16 7.6 1.3 V ns A μC Note 1. Pulse test, t  300s, duty cycle, d  2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 6.22 2.54 14.61 2.29 1.02 1.27 8.13 BSC 15.88 2.79 1.40 1.78 .270 .100 .575 .090 .040 .050 .320 BSC .625 .110 .055 .070 1 = Gate 2 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Fig. 1. Output Characteristics @ TJ = 25oC 6 VGS = 5V 2V 1V 5 VGS = 5V 2V 1V 12 10 4 0V 3 I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25oC 14 -1V 0V 8 6 2 -1V 4 1 - 2V 2 - 3V 0 0 1 2 3 4 5 6 7 - 2V - 3V 0 8 9 10 11 0 10 20 VDS - Volts 40 50 60 Fig. 4. Drain Current @ TJ = 25oC Fig. 3. Output Characteristics @ TJ = 125oC 6 30 VDS - Volts 1.E-01 VGS = - 3.00V VGS = 5V 0V 5 1.E-02 - 3.25V 1.E-03 I D - Amperes I D - Amperes 4 -1V 3 2 - 3.50V - 3.75V 1.E-04 - 4.00V - 4.25V 1.E-05 - 4.50V - 2V 1 1.E-06 - 3V 0 1.E-07 0 5 10 15 20 25 0 100 200 300 400 VDS - Volts 600 700 800 900 1000 1100 1200 VDS - Volts Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ TJ = 100oC 1.E-01 500 1.E+09 ∆VDS = 700V - 100V VGS = - 3.25V 1.E-02 1.E+08 - 3.75V 1.E-03 - 4.00V 1.E-04 RO - Ohms I D - Amperes - 3.50V 1.E+07 o TJ = 25 C - 4.25V - 4.50V 1.E-05 o TJ = 100 C 1.E+06 1.E+05 1.E-06 0 100 200 300 400 500 600 700 800 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 VGS - Volts -3.4 -3.2 -3.0 -2.8 IXTA6N100D2 Fig. 8. RDS(on) Normalized to ID = 3A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 3.0 2.6 VGS = 0V 2.4 I D = 3A VGS = 0V 5V 2.2 2.2 RDS(on) - Normalized RDS(on) - Normalized 2.6 IXTP6N100D2 IXTH6N100D2 1.8 1.4 1.0 o TJ = 125 C 2.0 1.8 1.6 1.4 1.2 o TJ = 25 C 1.0 0.6 0.8 0.2 0.6 -50 -25 0 25 50 75 100 125 150 0 2 4 TJ - Degrees Centigrade 6 8 10 12 14 I D - Amperes Fig. 9. Input Admittance Fig. 10. Transconductance 16 12 VDS = 30V VDS = 30V 14 o 10 TJ = - 40 C g f s - Siemens I D - Amperes 12 10 8 o TJ = 125 C o 25 C 6 o - 40 C 8 o 25 C o 125 C 6 4 4 2 2 0 0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0 1.0 2 4 6 VGS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.3 10 12 14 16 Fig. 12. Forward Voltage Drop of Intrinsic Diode 18 VGS = -10V 16 1.2 14 VGS(off) @ VDS = 25V 12 I S - Amperes BV / VGS(off) - Normalized 8 I D - Amperes 1.1 BVDSX @ VGS = - 5V 1.0 10 8 o TJ = 125 C 6 o TJ = 25 C 4 0.9 2 0.8 0 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 1.0 IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 10,000 VDS = 500V 4 I D = 3A Capacitance - PicoFarads 3 Ciss 2 VGS - Volts 1,000 Coss 100 I G = 10mA 1 0 -1 -2 -3 Crss f = 1 MHz -4 10 -5 0 5 10 15 20 25 30 35 0 40 10 20 30 VDS - Volts Fig. 15. Forward-Bias Safe Operating Area 60 70 80 90 100 o @ TC = 75 C 100 o o TJ = 150 C TJ = 150 C o o TC = 25 C Single Pulse TC = 75 C Single Pulse RDS(on) Limit I D - Amperes 100μs 1ms 1 RDS(on) Limit 10 25μs I D - Amperes 10 50 Fig. 16. Forward-Bias Safe Operating Area o @ TC = 25 C 100 40 QG - NanoCoulombs 100μs 1ms 1 10ms 100ms 10ms DC 100ms DC 0.1 0.1 10 100 1,000 10 100 1,000 VDS - Volts VDS - Volts Fig. 17. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N100D2(6C) 7-15-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.