IXTH6N150

IXTT6N150 IXTH6N150 High Voltage Power MOSFET VDSS ID25 1500V 6A 3.5 RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V Maximum Ratings VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS TC = 25C TC = 25C dv/dt IS  IDM, VDD  VDSS, TJ  150C PD TC = 25C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 6 A 24 A 3 500 A mJ 5 V/ns 540 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g S D (Tab) TO-247 (IXTH) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1500 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V    V 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 ©2019 IXYS CORPORATION, All Rights Reserved 25 A 250 A 3.5 D (Tab) D = Drain Tab = Drain International Standard Packages Molding Epoxies Weet UL 94 V-0 Flammability Classification Fast Intrinsic Diode Low Package Inductance Advantages V 5.0 S Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D G = Gate S = Source  RDS(on) = =    Easy to Mount Space Savings High Power Density Applications    High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100233C(03/19) IXTT6N150 IXTH6N150 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 4.0 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 6.5 S 2230 pF 170 pF 64 pF 22 ns 20 ns 50 ns 38 ns 67 nC 12 nC 36 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 6 A ISM Repetitive, Pulse Width Limited by TJM 24 A VSD IF = 6A, VGS = 0V, Note 1 1.3 V trr IF = 3A, -di/dt = 100A/s IRM QRM Note: VR = 100V, VGS = 0V 1.5 μs 12 A 9 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT6N150 IXTH6N150 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 10 6 VGS = 10V VGS = 10V 9 5 8 7V 7V 7 I D - Amperes I D - Amperes 4 3 6V 2 5 4 3 6V 2 1 1 5V 0 5V 0 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature 6 3.4 VGS = 10V 7V 4 6V 3 2 35 VGS = 10V 3.0 RDS(on) - Normalized 5 I D - Amperes 6 2.6 I D = 6A 2.2 I D = 3A 1.8 1.4 1.0 1 5V 0.6 0 0.2 0 5 10 15 20 25 30 35 40 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 7 2.8 VGS = 10V 2.6 6 2.4 o TJ = 125 C 5 2.2 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.8 1.6 1.4 4 3 2 o TJ = 25 C 1.2 1 1.0 0.8 0 0 1 2 3 4 5 6 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 7 8 9 10 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTT6N150 IXTH6N150 Fig. 8. Transconductance Fig. 7. Input Admittance 12 9 o TJ = - 40 C VDS = 20V VDS = 20V 8 10 7 o TJ = 125 C g f s - Siemens I D - Amperes 6 o 25 C 5 o - 40 C 4 3 o 8 25 C 6 125 C o 4 2 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 4 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 6 7 8 9 Fig. 10. Gate Charge 18 10 16 9 VDS = 750V I D = 3A 8 14 I G = 10mA 7 12 V GS - Volts I S - Amperes 5 I D - Amperes 10 8 6 6 5 4 o TJ = 125 C 3 o TJ = 25 C 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 RDS(on) Limit Ciss 1,000 25μs 10 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 100μs 1ms 1 100 o 10ms TJ = 150 C Crss o TC = 25 C DC Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTT6N150 IXTH6N150 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N150 (5P)1-19-10 IXTT6N150 IXTH6N150 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTT6N150 IXTH6N150 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved