IXTH75N10L2

Advance Technical Information IXTH75N10L2 IXTT75N10L2 LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 = 100V = 75A ≤ 21mΩ Ω RDS(on) D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 75 A IDM TC = 25°C, Pulse Width Limited by TJM 225 A IA EAS TC = 25°C 75 2.5 A J PD TC = 25°C 400 W -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 TO-268 6.0 4.0 g g G G S D (Tab) G = Gate S = Source z z z BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 Designed for Linear Operation International Standard Packages Avalanche Rated Integrated Gate Resistor for Easy Paralleling Guaranteed FBSOA at 75°C Advantages V z 4.5 V z ±100 nA 5 μA 50 μA 21 mΩ z Easy to Mount Space Savings High Power Density Applications z z z z z © 2009 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Features z Characteristic Values Min. Typ. Max. D (Tab) S TO-268 (IXTT) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100200(9/09) IXTH75N10L2 IXTT75N10L2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 VDS = 10V, ID = 0.5 • ID25, Note 1 44 Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Integrated Gate Input Resistor td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 0Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S pF 1280 pF 350 pF 3.0 Ω 23 ns 14 ns 68 ns e 15 ns Terminals: 1 - Gate 3 - Source 215 nC 36 nC 80 nC 0.31 °C/W RthJC RthCS 53 8100 Ciss TO-247 (IXTH) Outline TO-247 0.21 °C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 80V, ID = 3A, TC = 75°C, Tp = 5s 240 W 1 2 ∅P 3 Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXTT) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 37.5A, -di/dt = 100A/μs, VR = 50V, VGS = 0V 180 16.2 1.46 75 A 300 A 1.4 V ns A μC Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH75N10L2 IXTT75N10L2 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 80 280 VGS = 20V 14V 12V 10V 70 10V 200 8V 50 ID - Amperes ID - Amperes 60 VGS = 20V 14V 12V 240 40 6V 30 160 8V 120 7V 80 20 6V 40 10 4V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 5 10 80 25 3.0 VGS = 20V 14V 12V 10V 60 VGS = 10V 2.6 R DS(on) - Normalized 70 8V ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 37.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 40 6V 30 2.2 I D = 75A 1.8 I D = 37.5A 1.4 1.0 20 0.6 10 4V 0 0.2 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 37.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 80 4.5 VGS = 10V 4.0 70 3.5 60 3.0 ID - Amperes R DS(on) - Normalized 15 VDS - Volts VDS - Volts TJ = 125ºC 2.5 2.0 1.5 50 40 30 20 TJ = 25ºC 1.0 10 0.5 0 0 20 40 60 80 100 120 140 160 180 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 200 220 240 260 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTH75N10L2 IXTT75N10L2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 90 180 80 TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC 160 70 g f s - Siemens ID - Amperes 140 120 100 80 60 25ºC 60 125ºC 50 40 30 20 40 10 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 240 VDS = 50V 14 I D = 37.5A 200 I G = 10mA 12 VGS - Volts IS - Amperes 160 120 80 10 8 6 TJ = 125ºC 4 TJ = 25ºC 40 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 250 300 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100.0 1.00 Ciss 10.0 Z(th)JC - ºC / W Capacitance - NanoFarads f = 1 MHz Coss 0.10 1.0 Crss 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH75N10L2 IXTT75N10L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 25µs ID - Amperes 100µs 1ms 100 25µs ID - Amperes 100 100µs 1ms 10ms 10 10 10ms 100ms DC TJ = 150ºC TC = 25ºC Single Pulse 1 TJ = 150ºC 100ms TC = 75ºC Single Pulse DC 1 1 10 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: T_75N10L2(7R)9-25-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.