IXTT76P10THV
IXTA76P10T
IXTP76P10T
IXTH76P10T
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
VDSS
ID25
=
=
RDS(on)
- 100V
- 76A
25m
TO-268HV
(IXTT)
G
D
S
D (Tab)
G
TO-263 AA
(IXTA)
S
G
S
D (Tab)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
- 100
V
VDGR
TJ = 25C to 150C, RGS = 1M
- 100
V
VGSS
Continuous
15
V
VGSM
Transient
25
V
ID25
TC = 25C
- 76
A
IDM
TC = 25C, Pulse Width Limited by TJM
- 230
A
IA
EAS
TC = 25C
TC = 25C
- 38
1
A
J
PD
TC = 25C
298
W
D
-55 ... +150
150
-55 ... +150
C
C
C
G = Gate
S = Source
300
260
°C
°C
Features
1.13 /10
Nm/lb.in.
2.5
3.0
4.0
6.0
g
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-268HV
TO-247
TO-220AB
(IXTP)
G
DS
D (Tab)
TO-247
(IXTH)
G
S
D (Tab)
D
= Drain
Tab = Drain
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = - 250A
-100
VGS(th)
VDS = VGS, ID = - 250A
- 2.0
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
V
- 4.0
© 2017 IXYS CORPORATION, All Rights Reserved
Applications
V
100 nA
TJ = 125C
Easy to Mount
Space Savings
- 15 A
- 750 A
25 m
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS100024C(9/15)
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = -10V, ID = 0.5 • ID25, Note 1
35
Ciss
VGS = 0V, VDS = - 25V, f = 1MHz
Coss
Crss
td(on)
Resistive Switching Times
tr
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 (External)
tf
Qg(on)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgs
Qgd
58
S
13.7
nF
890
pF
275
pF
25
ns
40
ns
52
ns
20
ns
197
nC
65
nC
65
nC
0.42 C/W
RthJC
TO-220
TO-247
RthCS
0.50
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 38A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 38A, -di/dt = -100A/s
VR = - 50V, VGS = 0V
Note
1:
C/W
C/W
70
215
-6
- 76
A
- 304
A
-1.3
V
ns
nC
A
Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
o
o
Fig. 1. Output Characteristics @ TJ = 25 C
Fig. 2. Extended Output Characteristics @ TJ = 25 C
-80
-280
VGS = -10V
- 9V
- 8V
-70
VGS = -10V
-60
- 6V
-40
- 8V
-200
- 7V
-50
I D - Amperes
I D - Amperes
- 9V
-240
-30
-160
- 7V
-120
-80
-20
-10
- 6V
-40
- 5V
- 5V
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
0
-2
-5
-10
-15
2.0
-80
VGS = -10V
- 9V
- 8V
- 7V
-30
VGS = -10V
1.8
RDS(on) - Normalized
I D - Amperes
-60
-25
Fig. 4. RDS(on) Normalized to ID = - 38A Value vs.
Junction Temperature
o
Fig. 3. Output Characteristics @ TJ = 125 C
-70
-20
VDS - Volts
VDS - Volts
- 6V
-50
-40
-30
- 5V
-20
1.6
I D = - 76A
I D = - 38A
1.4
1.2
1.0
0.8
-10
0
0.6
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
-2.8
-3.2
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 38A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
-90
2.2
VGS = -10V
-80
2.0
o
TJ = 125 C
-60
I D - Amperes
RDS(on) - Normalized
-70
1.8
1.6
1.4
-50
-40
-30
1.2
o
TJ = 25 C
1.0
-20
-10
0
0.8
0
-40
-80
-120
-160
I D - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
-200
-240
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
100
-140
o
TJ = - 40 C
VDS = -10V
VDS = -10V
-120
80
o
25 C
-100
o
g f s - Siemens
I D - Amperes
TJ = 125 C
o
25 C
o
- 40 C
-80
-60
o
125 C
60
40
-40
20
-20
0
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
-20
-40
-60
VGS - Volts
-100
-120
-140
-160
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-10
-240
VDS = - 50V
-9
-200
I D = - 38A
-8
I G = -1mA
-7
V GS - Volts
-160
I S - Amperes
-80
I D - Amperes
-120
o
TJ = 125 C
-80
-6
-5
-4
-3
o
TJ = 25 C
-2
-40
-1
0
0
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
-1.5
0
20
40
60
VSD - Volts
80
100
120
140
160
180
200
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
- 1,000
1ms
RDS(on) Limit
10,000
- 100
Ciss
I D - Amperes
Capacitance - PicoFarads
f = 1 MHz
1,000
100µs
25µs
10ms
100ms
DC
- 10
C oss
o
TJ = 150 C
o
TC = 25 C
Single Pulse
C rss
-1
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
-1
-10
VDS - Volts
-100
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
44
44
RG = 1Ω, VGS = -10V
40
40
t r - Nanoseconds
t r - Nanoseconds
VDS = - 50V
36
I D = - 38A
32
28
o
TJ = 25 C
36
RG = 1Ω, VGS = -10V
VDS = - 50V
32
28
I D = - 76A
o
24
TJ = 125 C
24
20
20
25
35
45
55
65
75
85
95
105
115
125
-36
-40
-44
-48
TJ - Degrees Centigrade
tr
td(on)
tf
-68
-72
-76
I D = - 76A, - 38A
80
50
40
30
70
65
VDS = - 50V
21
60
I D = - 38A
20
55
19
50
I D = - 76A
18
45
17
0
2
4
6
8
10
12
14
16
18
40
16
10
0
25
20
35
45
55
24
tf
td(off)
tf
19
46
o
TJ = 125 C, 25 C
18
42
17
38
16
34
-56
-60
-64
I D - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
-68
-72
-76
t f - Nanoseconds
50
-52
35
125
td(off)
240
VDS = - 50V
I D = - 38A, - 76A
120
180
80
120
40
60
0
0
0
2
4
6
8
10
12
RG - Ohms
14
16
18
20
t d(off) - Nanoseconds
20
t d(off) - Nanoseconds
t f - Nanoseconds
160
54
-48
115
TJ = 125 C, VGS = -10V
58
21
-44
105
o
RG = 1Ω, VGS = -10V
-40
95
300
62
VDS = - 50V
-36
85
200
66
o
75
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
22
65
TJ - Degrees Centigrade
RG - Ohms
23
t d(off) - Nanoseconds
70
t f - Nanoseconds
22
120
td(off)
RG = 1Ω, VGS = -10V
90
t d(on) - Nanoseconds
t r - Nanoseconds
-64
75
23
o
VDS = - 50V
-60
24
110
TJ = 125 C, VGS = -10V
160
-56
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
200
-52
I D - Amperes
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 19. Maximum Transient Thermal Impedance
1
Z(th)JC - K / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_76P10T(A6)11-08-10-A
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
TO-268HV Outline
PINS:
1 - Gate 2 - Source
3 - Drain
TO-263 Outline
TO-247 Outline
TO-220 Outline
D
A
A2
A
B
E
Q
S
R
D2
D1
D
P1
1
2
4
3
L1
C
1 = Gate
2 = Drain
3 = Source
4 = Drain
A1
C
b
b2
b4
e
Pins:
© 2017 IXYS CORPORATION, All Rights Reserved
E1
L
1 - Gate
3 - Source
2 - Drain
1 - Gate
2,4 - Drain
3 - Source
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.