IXTH80N20L

Advance Technical Information IXTT80N20L IXTH80N20L LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 80A ≤ 32mΩ Ω RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 80 A IDM TC = 25°C, Pulse Width Limited by TJM 340 A IA EAS TC = 25°C TC = 25°C 80 2.5 A J PD TC = 25°C 520 W -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-268 TO-247 4 6 g g TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved z Easy to Mount Space Savings High Power Density V Applications 4.0 V ±100 nA z 25 μA z 250 μA 32 mΩ z z z Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100294(11/10) IXTT80N20L IXTH80N20L Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-268 Outline 45 S 6160 pF 1170 pF 520 pF 29 ns 44 ns 72 ns 29 ns 180 nC 30 nC 95 nC Terminals: 1 - Gate 3 - Source 2 - Drain 4 - Drain 0.24 °C/W RthJC RthCS TO-247 0.21 °C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 200V, ID = 0.75A, TC = 75°C, tp = 3s 150 W Source-Drain Diode TO-247 Outline Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = IS, -di/dt = 100A/μs, VR = 100V, VGS = 0V 250 80 A 320 A 1.5 V 1 2 ∅P 3 ns e Terminals: 1 - Gate 3 - Source Note 1. Dim. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT80N20L IXTH80N20L Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 250 VGS = 10V 9V 8V 70 VGS = 10V 225 9V 200 60 175 40 ID - Amperes ID - Amperes 7V 50 6V 30 8V 150 125 7V 100 75 20 10 6V 50 5V 25 0 5V 0 0 0.5 1 1.5 2 2.5 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 80 2.6 VGS = 10V 9V 8V 70 2.4 VGS = 10V 2.2 60 7V R DS(on) - Normalized ID - Amperes 15 VDS - Volts 50 6V 40 30 20 I D = 80A 1.8 I D = 40A 1.6 1.4 1.2 1.0 0.8 5V 10 2.0 0.6 0 0.4 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 90 3.2 3.0 VGS = 10V 80 2.8 TJ = 125ºC 70 2.4 60 ID - Amperes R DS(on) - Normalized 2.6 2.2 2.0 1.8 1.6 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1.0 0.8 0 0 20 40 60 80 100 120 140 160 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 180 200 220 240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT80N20L IXTH80N20L Fig. 7. Input Admittance Fig. 8. Transconductance 60 100 TJ = - 40ºC 90 50 80 25ºC g f s - Siemens ID - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 20 40 125ºC 30 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 140 160 180 200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 240 10 9 200 VDS = 100V I D = 40A 8 I G = 10mA 7 VGS - Volts IS - Amperes 160 120 80 TJ = 125ºC 6 5 4 3 TJ = 25ºC 2 40 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 20 40 VSD - Volts 60 80 100 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 0.1 0.01 Crss f = 1 MHz 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT80N20L IXTH80N20L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1000 1000 RDS(on) Limit RDS(on) Limit 25µs 100 25µs 100 100µs ID - Amperes ID - Amperes 100µs 1ms 10 10ms 1ms 10 10ms 100ms DC 1 100ms 1 TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse DC 0.1 0.1 1 10 100 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 1000 1 10 100 1000 VDS - Volts IXYS REF: T_80N20L(8X)10-29-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.