IXTH80N65X2

IXTH80N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 80A  38m  N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 160 A IA TC = 25C 10 A EAS TC = 25C 3 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C TJ 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 1.13 / 10 Nm/lb.in 6 g Weight D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 2.7 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0 V   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved 25 A 400 μA 38 m DS100674B(4/18) IXTH80N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 36 RGi Gate Input Resistance 72 S 0.7  D A A2 A2 + R 7800 pF 5600 pF 10 pF 267 1160 pF pF 36 ns 11 ns 72 ns 7 ns 137 nC 37 nC 46 nC Crss S D2 + D1 D VGS = 0V, VDS = 25V, f = 1MHz A + 0K M D B M 0P O B E Q Ciss Coss TO-247 (IXTH) Outline 0P1 1 2 3 4 ixys option L1 C E1 L Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source 0.14 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 80 A Repetitive, pulse Width Limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 40A, -di/dt = 100A/μs 465 10 43 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTH80N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 250 80 VGS = 10V 8V 70 VGS = 10V 9V 50 40 I D - Amperes I D - Amperes 200 7V 60 6V 30 8V 150 7V 100 20 6V 50 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 0 3 5 10 VDS - Volts 80 3.4 VGS = 10V 7V 60 25 2.6 6V 50 40 30 2.2 I D = 80A 1.8 I D = 40A 1.4 1.0 5V 20 VGS = 10V 3.0 RDS(on) - Normalized I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 70 15 VDS - Volts 0.6 10 4V 0.2 0 0 4.5 1 2 3 4 5 6 7 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.0 150 1.2 o BVDSS / VGS(th) - Normalized TJ = 125 C 3.5 RDS(on) - Normalized -50 8 3.0 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH80N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 90 140 80 120 70 100 I D - Amperes I D - Amperes 60 50 40 30 o TJ = 125 C 80 o 25 C o - 40 C 60 40 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 200 o 180 TJ = - 40 C 120 160 140 o 25 C 80 I S - Amperes g f s - Siemens 100 o 125 C 60 120 100 80 o TJ = 125 C 60 40 o TJ = 25 C 40 20 20 0 0 0 20 40 60 80 100 120 0.3 140 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V V GS - Volts Capacitance - PicoFarads I D = 40A 8 I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 Crss f = 1 MHz 0 1 0 20 40 60 80 100 120 140 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTH80N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 55 50 RDS(on) Limit 40 35 I D - Amperes EOSS - MicroJoules 45 30 25 20 15 100 25μs 10 100μs 1 o TJ = 150 C 10 TC = 25 C Single Pulse 5 Fig. 15. Maximum Transient0.1Thermal Impedance 0 1 0 1ms o 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_80N65X2 (Z8-S602) 10-09-15 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.