IXTH 8P50
IXTT 8P50
Standard Power
MOSFET
VDSS = -500 V
=
-8 A
ID25
RDS(on) = 1.2 Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
-500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
-500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
-8
A
IDM
TC = 25°C, pulse width limited by TJ
-32
A
IAR
TC = 25°C
-8
A
EAR
TC = 25°C
30
mJ
PD
TC = 25°C
180
W
-55 ... +150
°C
150
°C
G = Gate,
S = Source,
-55 ... +150
°C
Features
300
°C
250
°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body for 10s
Md
Mounting torque (TO-247)
Weight
TO-247
TO-268
1.13/10 Nm/lb.in.
6
5
g
g
D (TAB)
TO-268 (IXTT)
G
S
D (TAB)
D = Drain,
TAB = Drain
• International standard packages
• Low R
HDMOS process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
TM
DS (on)
rated
• Low package inductance (
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