IXTH96N20P

IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200 V VGSS VGSM Continous Transient ±20 ±30 V V ID25 TC = 25° C 96 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 225 A IAR TC = 25° C 60 A Maximum Ratings EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 600 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-247 TO-268 (TO-3P, TO-247) 1.13/10 Nm/lb.in. G 5.5 6.0 5.0 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) g g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 150° C V 5.0 V ±100 nA 25 250 µA µA 24 mΩ D S (TAB) TO-3P (IXTQ) G D (TAB) S TO-268 (IXTT) G G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features l l © 2006 IXYS All rights reserved = 200 V = 96 A ≤ 24 mΩ Ω l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99117E(10/05) IXTH 96N20P IXTQ 96N20P IXTT 96N20P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 52 S 4800 pF 1020 pF 270 pF Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 30 ns td(off) RG = 4 Ω (External) 75 ns 30 ns 145 nC 30 nC 80 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC TO-3P (IXTQ) Outline 0.25° C/W RthCS (TO-3P, TO-247) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 96 A ISM Repetitive 240 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V TO-247 (IXTH) Outline 1 2 Dim. 3 Terminals: 1 - Gate 3 - Source 160 3.0 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-268 (IXTT) Outline ns µC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTH 96N20P IXTQ 96N20P IXTT 96N20P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Char acte ris tics @ 25ºC 250 100 V GS = 10V 9V 90 80 200 9V 175 I D - Amperes 70 I D - Amperes V GS = 10V 225 60 8V 50 40 7V 30 20 150 125 8V 100 75 7V 50 6V 10 25 0 6V 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 V D S - V olts Fig. 3. Output Char acte r is tics @ 150ºC 12 14 16 18 20 3 V GS = 10V 9V 90 2.8 R D S ( o n ) - Normalized 70 8V 60 50 7V 40 30 V GS = 10V 2.6 80 I D - Amperes 10 Fig. 4. RDS(on ) Nor m alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 100 6V 20 2.4 2.2 2 I D = 96A 1.8 1.6 I D = 48A 1.4 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 V D S - V olts 5 6 -50 7 -25 4 50 75 100 125 150 175 90 V GS = 10V 3.7 25 Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature 0.5 ID25 V alue vs . ID 4.3 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to External Lead C urrent Lim it 80 70 3.4 TJ = 175ºC 3.1 2.8 2.5 2.2 TJ = 125ºC 1.9 1.6 I D - Amperes R D S ( o n ) - Normalized 8 V D S - V olts 60 50 40 30 20 1.3 1 TJ = 25ºC 10 0 0.7 0 25 50 75 100 125 150 175 200 225 250 I D - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTH 96N20P IXTQ 96N20P IXTT 96N20P Fig. 8. Tr ans conductance 80 140 70 120 60 - Siemens 160 100 60 TJ = 150ºC 25ºC -40ºC 40 50 40 fs 80 TJ = -40ºC 25ºC 150ºC 30 g I D - Amperes Fig. 7. Input Adm ittance 20 20 10 0 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 25 50 75 V G S - V olts Fig. 9. Sour ce Cur r e nt vs . Source -To-Dr ain V oltage 125 175 200 10 V DS = 100V 9 250 I D = 48A 8 I G = 10m A 7 V G S - Volts 200 150 100 6 5 4 3 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - V olts 15 30 45 Q 60 G 75 90 105 120 135 150 - nanoCoulombs Fig. 12. Forw ar d-Bias Safe Ope r ating Are a Fig. 11. Capacitance 1000 10000 f = 1MH z TJ = 175ºC R DS (on) Lim it TC = 25ºC C is s I D - Amperes Capacitance - picoFarads 150 Fig. 10. Gate Charge 300 I S - Amperes 100 I D - A mperes 1000 C os s 25µs 100 100µs 1m s 10m s 10 DC C rss 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTH 96N20P IXTQ 96N20P IXTT 96N20P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.