IXTJ4N150

IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6 RDS(on)  (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2.5 A IDM TC = 25C, Pulse Width Limited by TJM 12 A IA EAS TC = 25C TC = 25C 4 350 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 110 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G D Isolated Tab S G = Gate S = Source D = Drain Features       Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1500 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 2A, Note 1 Applications V 5.0 V    100 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits 10 A 100 A 6  DS100449C(12/17) IXTJ4N150 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.8 VDS = 20V, ID = 2A, Note 1 Ciss Coss 4.6 S 1576 pF 105 pF 35 pF 19 ns 23 ns 42 ns 22 ns 44.5 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 2A RG = 5 (External) Qg(on) ISO TO-247 (IXTJ) OUTLINE 7.7 nC Qgd 12.7 nC RthJC RthCS 0.30 1.13 C/W °C/W Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 2A PINS: 1 = Gate 2 = Drain 3 = Source 4 = Isolated Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 1.6 A VSD IF = 4A, VGS = 0V, Note 1 1.3 V trr IF = 2A, -di/dt = 100A/s IRM QRM Note: VR = 100V, VGS = 0V 0.9 μs 15.0 A 6.7 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTJ4N150 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Output Characteristics @ TJ = 125 C 5 3.5 VGS = 10V 7V VGS = 10V 6V 3.0 4 2.5 I D - Amperes I D - Amperes 6V 3 2 2.0 5V 1.5 1.0 1 5V 0.5 4V 4V 0 0 3.0 4 8 12 16 20 0.0 24 0 28 10 15 20 30 35 Fig. 3. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Drain Current 2.6 RDS(on) - Normalized 2.2 I D = 4A 1.8 I D = 2A 1.4 1.0 o TJ = 125 C 2.0 1.8 1.6 1.4 1.2 0.6 40 VGS = 10V 2.4 2.2 RDS(on) - Normalized 25 VDS - Volts VGS = 10V 2.6 5 VDS - Volts o TJ = 25 C 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0.0 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 4.5 3.0 4.0 2.5 3.0 2.0 I D - Amperes I D - Amperes 3.5 1.5 1.0 2.5 o TJ = 125 C 2.0 o 25 C 1.5 o - 40 C 1.0 0.5 0.5 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2017 IXYS CORPORATION, All Rights Reserved 100 125 150 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 IXTJ4N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 14 9 8 12 o TJ = - 40 C 7 I S - Amperes g f s - Siemens 10 6 o 25 C 5 4 o 125 C 8 6 o TJ = 125 C 3 4 o TJ = 25 C 2 2 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.4 4.5 0.5 0.6 0.7 Fig. 9. Gate Charge 0.9 1.0 Fig. 10. Capacitance 10 10,000 f = 1 MHz VDS = 750V I D = 2A 8 I G = 10mA Capacitance - PicoFarads VGS - Volts 0.8 VSD - Volts I D - Amperes 6 4 2 1,000 C iss C oss 100 Crss 0 10 0 5 10 15 20 25 30 35 40 45 0 5 10 15 QG - NanoCoulombs Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.2 20 25 30 35 40 VDS - Volts Fig. 12. Forward-Bias Safe Operating Area 100 o TJ = 150 C RDS(on) Limit BVDSS 1.1 10 25μs I D - Amperes BVDSS & VGS(th) - Normalized o TC = 25 C Single Pulse 1.0 0.9 VGS(th) 100μs 1 1ms 10ms 0.1 0.8 100ms DC 0.01 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTJ4N150 Fig. 12. Maximum Transient Thermal Impedance 10 Fig. 13. Maximum Transient Thermal Impedance aaa 3 Z(th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N150 (4A)09-12-12-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.