IXTJ6N150

IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85 RDS(on)  (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IA EAS TC = 25C TC = 25C 3 500 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in 2500 V~ 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Torque VISOL 50/60 Hz, RM, t = 1min Weight G       VGS = 0V, ID = 250A 1500 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 3A, Note 1 V    100 nA TJ = 125C ©2019 IXYS CORPORATION, All Rights Reserved Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification Easy to Mount Space Savings High Power Density Applications V 5.0 = Drain Advantages  BVDSS D Features  Characteristic Values Min. Typ. Max. Isolated Tab S G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits 25 A 250 A 3.85  DS100448C(03/19) IXTJ6N150 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 4.0 VDS = 20V, ID = 3A, Note 1 Ciss Coss 6.5 S 2230 pF 170 pF 64 pF 22 ns 20 ns 50 ns 38 ns 67 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 3A RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 3A 12 nC 36 nC 0.30 1.0 C/W °C/W Qgd RthJC RthCS ISO TO-247 (IXTJ) OUTLINE PINS: 1 = Gate 2 = Drain 3 = Source 4 = Isolated Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 6 A Repetitive, Pulse Width Limited by TJM 24 A VSD IF = 6A, VGS = 0V, Note 1 1.3 V trr IF = 3A, -di/dt = 100A/s IRM QRM Note: VR = 100V, VGS = 0V 1.5 μs 12 A 9 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTJ6N150 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 10 6 VGS = 10V VGS = 10V 9 5 8 7V 7V 7 I D - Amperes I D - Amperes 4 3 6V 2 5 4 3 6V 2 1 1 5V 0 5V 0 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature 6 3.4 VGS = 10V 7V 4 6V 3 2 35 VGS = 10V 3.0 RDS(on) - Normalized 5 I D - Amperes 6 2.6 I D = 6A 2.2 I D = 3A 1.8 1.4 1.0 1 5V 0.6 0 0.2 0 5 10 15 20 25 30 35 40 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.5 2.8 VGS = 10V 2.6 3.0 2.4 o TJ = 125 C 2.5 2.2 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.8 1.6 1.4 2.0 1.5 1.0 o TJ = 25 C 1.2 0.5 1.0 0.8 0.0 0 1 2 3 4 5 6 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 7 8 9 10 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTJ6N150 Fig. 8. Transconductance Fig. 7. Input Admittance 12 9 o TJ = - 40 C VDS = 20V VDS = 20V 8 10 7 o TJ = 125 C g f s - Siemens I D - Amperes 6 o 25 C 5 o - 40 C 4 3 o 8 25 C 6 125 C o 4 2 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 4 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 6 7 8 9 Fig. 10. Gate Charge 18 10 16 9 VDS = 750V I D = 3A 8 14 I G = 10mA 7 12 V GS - Volts I S - Amperes 5 I D - Amperes 10 8 6 6 5 4 o TJ = 125 C 3 o TJ = 25 C 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 11. Capacitance 10,000 Fig. 12. Forward-Bias Safe Operating Area 100 f = 1 MHz 1,000 25μs 10 Ciss 100μs I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 1ms 1 10ms 0.1 o TJ = 150 C Crss 100ms o TC = 25 C Single Pulse 10 DC 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTJ6N150 Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N150 (6N)02-23-12 IXTJ6N150 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.