IXTK120N20P

PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 120 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 300 A IAR TC = 25° C 60 A EAR TC = 25° C 60 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤175° C, RG = 4 Ω 10 V/ns PD TC = 25° C 714 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C TJ TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-3P TO-264 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) 5.5 g 10 g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 175° C V 5.0 V ±100 nA 25 500 µA µA 22 mΩ G D (TAB) S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99207E(10/05) IXTK 120N20P IXTQ 120N20P TO-264 (IXTK) Outline Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 63 S 6000 pF 1300 pF 265 pF 30 ns 35 ns 100 ns 31 ns 152 nC 40 nC 75 nC Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.21° C/W RthCS TO-3P 0.21 ° C/W RthCS TO-264 0.15 ° C/W Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 120 A ISM Repetitive 300 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 180 3.0 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 TO-3P (IXTQ) Outline ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 120N20P IXTQ 120N20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 270 120 VGS = 10V 9V 8V 80 60 7V 40 180 150 8V 120 90 7V 60 6V 20 9V 210 I D - Amperes I D - Amperes 100 VGS = 10V 240 6V 30 5V 0 0 0 0.5 1 1.5 2 0 2.5 2 4 6 Fig. 3. Output Characteristics @ 150ºC 8 10 V D S - Volts V D S - Volts 12 14 16 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 120 VGS = 10V 9V 8V 3 R D S ( o n ) - Normalized I D - Amperes 100 80 7V 60 6V 40 20 VGS = 10V 2.5 I D = 120A 2 I D = 60A 1.5 1 5V 0 0.5 0 1 2 3 V D S - Volts 4 5 6 -50 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 0 25 50 75 100 125 TJ - Degrees Centigrade 150 175 Fig. 6. Drain Current vs. Case Tem perature 90 4 TJ = 175ºC External Lead Current Limit 80 3.5 70 3 2.5 VGS = 10V VGS = 15V 2 I D - Amperes R D S ( o n ) - Normalized -25 60 50 40 30 1.5 20 1 TJ = 25ºC 10 0 0.5 0 30 60 90 120 150 180 210 240 270 300 I D - Amperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTK 120N20P IXTQ 120N20P Fig. 8. Transconductance Fig. 7. Input Adm ittance 90 180 80 150 120 g f s - Siemens I D - Amperes 70 90 60 TJ = 150ºC 30 -40ºC 25ºC 60 50 TJ = -40ºC 40 25ºC 150ºC 30 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 8.5 30 60 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 120 180 210 10 VDS = 100V 9 300 I D = 60A 8 250 I G = 10mA VG S - Volts 7 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 0 1.6 20 40 60 80 100 120 Q G - nanoCoulombs 140 160 Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 TJ = 175ºC f = 1MHz TC = 25ºC R DS(on) Limit Ciss 10,000 I D - Amperes Capacitance - picoFarads 150 Fig. 10. Gate Charge 350 I S - Amperes 90 I D - Amperes Coss 1,000 25µs 100 100µs 1ms Crss 10ms DC 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTK 120N20P IXTQ 120N20P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.