IXTK140N20P

PolarHTTM Power MOSFET IXTK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS(on) ≤ 18 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 140 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 280 A IAR TC = 25° C 60 A EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD Maximum Ratings TC = 25° C W -55 ... +175 175 -55 ... +150 °C °C °C D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 500µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 140A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved 800 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Symbol Test Conditions (TJ = 25° C, unless otherwise specified) G l TJ TJM Tstg TL TSOLD Md Weight TO-264 (IXTK) V TJ = 150° C 14 5.0 V ±200 nA 25 250 µA µA 18 mΩ mΩ DS99194E(12/05) IXTK 140N20P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 84 S 7500 pF 1800 pF 280 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 100 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd TO-264 (IXTK) Outline 0.18° C/W RthJC RthCK ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 140 A ISM Repetitive 280 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 180 3.5 Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 140N20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 140 VGS = 10V 9V 8V 120 9V 240 100 210 I D - Amperes I D - Amperes VGS = 10V 270 80 7V 60 40 6V 8V 180 150 120 7V 90 60 20 6V 30 5V 0 0 0 0.5 1 1.5 2 0 2.5 1 2 3 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 4 5 6 V D S - Volts 7 8 9 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 140 VGS = 10V 9V 8V 3 R D S ( o n ) - Normalized 120 I D - Amperes 100 7V 80 60 40 6V 20 5V VGS = 10V 2.5 I D = 140A 2 I D = 70A 1.5 1 0 0.5 0 1 2 3 4 V D S - Volts 5 -50 6 -25 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 25 50 75 100 125 TJ - Degrees Centigrade 150 175 Fig. 6. Drain Current vs. Case Tem perature 90 4 TJ = 175ºC External Lead Current Limit 80 3.5 70 3 2.5 I D - Amperes R D S ( o n ) - Normalized 0 VGS = 10V VGS = 15V 2 60 50 40 30 1.5 20 1 10 TJ = 25ºC 0 0.5 0 50 100 150 200 I D - Amperes © 2006 IXYS All rights reserved 250 300 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTK 140N20P Fig. 8. Transconductance Fig. 7. Input Adm ittance 225 120 110 200 100 90 150 g f s - Siemens I D - Amperes 175 125 100 80 70 50 25ºC 40 150ºC 75 TJ = 150ºC 50 25ºC 30 -40ºC 20 25 TJ = -40ºC 60 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 40 80 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 240 10 300 250 9 VDS = 100V 8 I D = 70A I G = 10mA VG S - Volts 7 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 V S D - Volts 1.4 0 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 TJ = 175ºC f = 1MHz TC = 25ºC R DS(on) Limit Ciss 10,000 I D - Amperes Capacitance - picoFarads 160 Fig. 10. Gate Charge 350 I S - Amperes 120 I D - Amperes Coss 1,000 25µs 100µs 100 1ms Crss 10ms DC 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTK 140N20P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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