LinearTM Power MOSFET
w/ Extended FBSOA
IXTK17N120L
IXTX17N120L
VDSS
ID25
= 1200V
= 17A
Ω
< 900mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
TO-264 (IXTK)
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
Maximum Ratings
1200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1200
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
17
A
IDM
TC = 25°C, pulse width limited by TJM
34
A
IA
EAS
TC = 25°C
TC = 25°C
8.5
2.5
A
J
PD
TC = 25°C
700
W
-55...+150
°C
TJM
150
°C
Tstg
-55...+150
°C
TJ
TL
1.6mm (0.063 in.) from case for 10s
300
°C
TSOLD
Plastic body for 10s
260
°C
Md
FC
Mounting torque (IXTK)
Mounting Force (IXTX)
1.13/10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
Weight
TO-264
PLUS247
10
6
g
g
G
D
S
Tab
PLUS247 (IXTX)
G
D
Tab
S
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z
z
z
z
z
Designed for Linear Operations
Guaranteed FBSOA at 60ºC
Avalanche Rated
Low RDS(on) HDMOSTM Process
Molding Epoxies Meet UL94 V-0
Flammability Classification
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
z
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = 1mA
1200
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 20V, ID = 0.5 • IDSS, Note 1
TJ = 125°C
z
V
Applications
6.0
V
±200
nA
z
50 μA
2 mA
z
900 mΩ
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
Programmable Loads
Current Regulators
DC-DC Convertors
Battery Chargers
DC Choppers
Temperature and Lighting Controls
DS99615B(05/10)
IXTK17N120L
IXTX17N120L
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
3.5
VDS = 20V, ID = 0.5 • IDSS, Note 1
5.0
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
6.5
TO-264 (IXTK) Outline
S
8300
pF
520
pF
90
pF
42
ns
31
ns
110
ns
83
ns
155
nC
41
nC
60
nC
0.18 °C/W
RthJC
RthCS
°C/W
0.15
Safe Operating Area Specification
Symbol
Test Conditions
Characteristic Values
Min.
Typ.
Max.
SOA
VDS = 800V, ID = 0.3A, TC = 60°C, tP = 3s
240
W
PLUS 247TM (IXTX) Outline
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
17
A
ISM
Repetitive, Pulse Width Limited by TJM
50
A
VSD
IF = 17A, VGS = 0V, Note 1
1.5
V
trr
IF = IS, -di/dt = 100A/μs, VR = 100V
1830
ns
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Note:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTK17N120L
IXTX17N120L
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
35
18
VGS = 20V
14V
16
VGS = 20V
16V
14V
30
12V
14
ID - Amperes
ID - Amperes
25
12
10V
10
8
9V
12V
20
15
10V
6
10
4
9V
8V
5
2
7V
0
8V
7V
0
0
2
4
6
8
10
12
14
0
5
10
15
VDS - Volts
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 8.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
18
3.2
VGS = 20V
14V
12V
16
VGS = 20V
2.8
R DS(on) - Normalized
ID - Amperes
14
10V
12
10
9V
8
8V
6
2.4
I D = 17A
2.0
I D = 8.5A
1.6
1.2
4
7V
0.8
2
6V
5V
0
0
5
10
15
20
25
0.4
-50
30
-25
0
Fig. 5. RDS(on) Normalized to ID = 8.5A Value vs.
Drain Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
20
2.8
2.6
18
VGS = 20V
TJ = 125ºC
2.4
16
14
2.2
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
VDS - Volts
2.0
1.8
1.6
1.4
12
10
8
6
1.2
4
TJ = 25ºC
1.0
2
0.8
0
0
5
10
15
20
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
25
30
35
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTK17N120L
IXTX17N120L
Fig. 7. Input Admittance
Fig. 8. Transconductance
20
9
18
8
16
12
g f s - Siemens
ID - Amperes
7
TJ = 125ºC
25ºC
- 40ºC
14
TJ = - 40ºC, 25ºC, 125ºC
10
8
6
6
5
4
3
2
4
1
2
0
0
4
5
6
7
8
9
10
11
12
0
2
4
6
8
VGS - Volts
10
12
14
16
18
20
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
16
50
45
14
VDS = 600V
12
I G = 10mA
I D = 8.5A
40
VGS - Volts
IS - Amperes
35
30
25
20
10
8
6
TJ = 125ºC
15
4
TJ = 25ºC
10
2
5
0
0
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
20
40
60
VSD - Volts
80
100
120
140
160
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
100,000
1
10,000
Ciss
Z (th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
0.1
0.01
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTK17N120L
IXTX17N120L
Fig. 13. Forward-Bias Safe Operating Area
Fig. 14. Forward-Bias Safe Operating Area
@ T C = 25ºC
@ T C = 60ºC
100
100
RDS(on) Limit
RDS(on) Limit
25µs
10
100µs
ID - Amperes
ID - Amperes
1ms
1
25µs
10
100µs
1ms
1
10ms
10ms
TJ = 150ºC
TJ = 150ºC
100ms
DC
TC = 25ºC
Single Pulse
TC = 60ºC
Single Pulse
100ms
DC
0.1
0.1
10
100
1000
VDS - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
10000
10
100
1000
10000
VDS - Volts
IXYS REF: T_17N120L(8N)02-18-09-B
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.