IXTK200N10P

PolarHTTM Power MOSFET IXTK 200N10P VDSS = 100 V ID25 = 200 A Ω RDS(on) ≤ 7.5 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 200 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 400 A IAR TC = 25° C 60 A EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 800 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 10 g TO-264 (IXTK) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 500µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D l Easy to mount Space savings High power density V TJ = 150° C 5.5 5.0 V ±200 nA 25 250 µA µA 7.5 mΩ mΩ DS99186E(10/05) IXTK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 97 S 7600 pF 2900 pF 860 pF td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 135 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-264 (IXTK) Outline 0.18°C/W RthCS °C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 50 V, VGS = 0 V 100 3.0 Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 200N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 175 VGS = 10V 300 9V 250 125 I D - Amperes I D - Amperes 150 8V 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 3 3.5 4 4.5 5 2.4 VGS = 10V 9V VGS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 V D S - Volts 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 80 2.4 70 2.2 TJ 2 = 175ºC 60 1.8 1.6 I D - Amperes R D S ( o n ) - Normalized 2 V D S - Volts VGS = 10V 1.4 VGS = 15V 1.2 50 40 30 20 1 0.8 10 TJ = 25ºC 0 0.6 0 50 100 150 200 I D - Amperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTK 200N10P Fig. 8. Transconductance 300 140 250 120 100 200 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 150 TJ = -40ºC 100 25ºC 25ºC 150ºC 60 40 150ºC 50 TJ = -40ºC 80 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 250 300 350 Fig. 10. Gate Charge VDS = 50V 9 300 I D = 100A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 200 10 350 200 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 f = 1MHz TJ = 175ºC R DS(on) Limit C iss 10,000 I D - Amperes Capacitance - picoFarads 150 I D - Amperes C oss C rss 1,000 TC = 25ºC 100µs 100 1ms 10ms DC 100 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTK 200N10P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.