IXTK40P50P

IXTK40P50P IXTX40P50P PolarPTM Power MOSFET VDSS ID25 = =  RDS(on) - 500V - 40A  230m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA - 40 A - 120 A TC = 25C - 40 A EAS TC = 25C 3.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 20..120/4.5..27 1.13/10 N/lb Nm/lb.in 6 10 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Force (PLUS247) Mounting Torque (TO-264) Weight PLUS247 TO-264 Tab PLUS247 (IXTX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features      International Standard Packages Rugged PolarPTM Process Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 500 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V - 50 A - 250 A RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved - 4.5 Easy to Mount Space Savings High Power Density V Applications V  230 m     High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99935D(6/15) IXTK40P50P IXTX40P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 23 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 38 S 11.5 nF 1150 pF 93 pF 37 ns 59 ns 90 ns 34 ns Dim. 205 nC 55 nC 75 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs TO-264 AA Outline VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.14C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 40 A ISM Repetitive, Pulse Width Limited by TJM -160 A VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V trr QRM IRM IF = - 20A, -di/dt = -150A/s Note 477 14.5 - 61 VR = -100V, VGS = 0V Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline ns C A 1: Pulse test, t  300s, duty cycle, d  2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK40P50P IXTX40P50P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -90 -40 VGS = -10V - 7V -35 -70 ID - Amperes -30 ID - Amperes VGS = -10V -80 -25 - 6V -20 -15 - 7V -60 -50 -40 - 6V -30 -10 -20 -5 - 5V -10 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -9 -5 -10 -15 -20 -25 -30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 20A Value vs. Junction Temperature 2.4 -40 VGS = -10V - 7V -35 VGS = -10V 2.0 -25 R DS(on) - Normalized ID - Amperes -30 - 6V -20 -15 I D = - 40A 1.6 I D = - 20A 1.2 -10 0.8 - 5V -5 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 20A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -45 2.4 -40 VGS = -10V 2.2 TJ = 125ºC -35 2.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 -30 -25 -20 -15 1.2 -10 TJ = 25ºC 1.0 -5 0.8 0 0 -10 -20 -30 -40 -50 -60 ID - Amperes © 2015 IXYS CORPORATION, All Rights Reserved -70 -80 -90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK40P50P IXTX40P50P Fig. 7. Input Admittance Fig. 8. Transconductance -70 70 -60 60 -50 50 TJ = - 40ºC g f s - Siemens ID - Amperes 25ºC -40 TJ = 125ºC 25ºC - 40ºC -30 40 -20 20 -10 10 0 -3.5 125ºC 30 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -10 -20 -30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -50 -60 -70 Fig. 10. Gate Charge -140 -10 -9 VDS = - 250V -8 I D = - 20A -120 I G = -1mA -100 -7 VGS - Volts IS - Amperes -40 ID - Amperes -80 -60 TJ = 125ºC -40 -6 -5 -4 -3 TJ = 25ºC -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 20 40 VSD - Volts 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1000 100,000 f = 1 MHz RDS(on) Limit - 100 10,000 25µs ID - Amperes Capacitance - PicoFarads Ciss Coss 1,000 100µs - 10 1ms 10ms 100ms 100 -1 Crss TJ = 150ºC DC TC = 25ºC Single Pulse 10 - 0.1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 10 - 100 VDS - Volts - 1000 IXTK40P50P IXTX40P50P Fig. 13. Maximum Transient Thermal Impedance Z (th )JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_40P50P(B9) 03-06-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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