IXTN102N65X2

IXTN102N65X2 X2-Class Power MOSFET VDSS ID25 = = RDS(on)  650V 76A 30m N-Channel Enhancement Mode Avalanche Rated miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 76 204 A A G = Gate S = Source IA EAS TC = 25C TC = 25C 25 3 A J PD TC = 25C 595 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 30 S D D = Drain Features      g International Standard Package miniBLOC with Aluminum Nitride Isolation Low QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 51A, Note 1 TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved  V 5.0 V 100 nA 25 350 A A 30 m High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100669B(1/20) IXTN102N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 51A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 82 S 0.7  10.9 nF 6100 pF 12.6 pF 367 1420 pF pF 37 ns 28 ns 67 ns 11 ns 152 nC 57 nC 33 nC Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 51A RG = 2(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 51A Qgd 0.21 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 102 A ISM Repetitive, Pulse Width Limited by TJM 408 A VSD IF = IS , VGS = 0V, Note 1 1.4 V trr IF = 51A, -di/dt = 100A/s QRM IRM 450 11.7 VR = 100V, VGS = 0V 52 ns  µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN102N65X2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 110 240 VGS = 10V 8V 100 VGS = 10V 90 80 70 I D - Amperes I D - Amperes 200 8V 160 7V 7V 60 6V 50 40 120 80 6V 30 20 40 5V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 110 3.5 VGS = 10V 7V R DS(on) - Normalized 80 I D - Amperes 25 6V 70 60 50 40 30 VGS = 10V 3.0 90 5V 20 2.5 I D = 102A 2.0 I D = 51A 1.5 1.0 0.5 10 4V 0.0 0 0 4.5 1 2 3 4 5 6 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 V GS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 100 15 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 V GS(th) 0.8 0.7 1.0 0.6 0.5 0 40 80 120 160 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 200 240 -60 -40 -20 0 20 40 60 80 T J - Degrees Centigrade 100 120 140 160 IXTN102N65X2 Fig. 8. Input Admittance 160 70 140 60 120 50 100 I D - Amperes I D - Amperes Fig. 7. Maximum Drain Current vs. Case Temperature 80 40 30 o 25 C o - 40 C 60 20 40 10 20 0 o TJ = 125 C 80 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 160 300 o TJ = - 40 C 140 250 120 200 I S - Amperes g f s - Siemens o 25 C 100 o 125 C 80 60 150 100 o TJ = 125 C 40 o TJ = 25 C 50 20 0 0 0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 V DS = 325V Ciss Capacitance - PicoFarads I D = 51A 8 VGS - Volts 1.2 VSD - Volts I G = 10mA 6 4 10,000 1,000 C oss 100 10 2 C rss f = 1 MHz 1 0 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTN102N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 70 1000 RDS(on) Limit 100 50 I D - Amperes E OSS - MicroJoules 60 40 30 25µs 100µs 10 20 1 o TJ = 150 C o 10 TC = 25 C Single Pulse 0 0 100 200 300 400 500 DC 0.1 600 1 10 VDS - Volts 100 1ms 10ms 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A IXTN102N65X2 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTN102N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved