IXTN120N25

IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 ID(RMS) IDM IAR TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C 120 75 480 90 A A A A EAR EAS TC = 25°C TC = 25°C 80 4.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC 730 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 AA (IXTK) G D (TAB) D S G = Gate S = Source D = Drain Tab = Drain Features •Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •International standard package •Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS V GS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 µA IGSS V GS = ±20 V DC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved 250 2.0 TJ = 25°C TJ = 125°C V 4.0 V ±200 nA 50 µA 3 mA • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density 20 mΩ DS98879D(11/03) IXTK 120N25 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test 65 Ciss S 7700 pF 1700 pF C rss 600 pF td(on) 35 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 98 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.5 Ω (External) tf ns ns 35 ns 360 Qg(on) Qgs 38 175 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd nC 63 nC 180 nC 0.17 K/W RthJC RthCK 0.15 Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 120 A ISM Repetitive; pulse width limited by TJM 480 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25A, -di/dt = 100 A/µs, VR = 100V Qrr IXYS MOSFETS and IGBTs are covered by one or more of the 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXYS reserves the right to change limits, test conditions, 350 ns 4 µC following U.S. patents: 5,049,961 5,187,117 5,063,307 5,237,481 and dimensions. 5,486,715 5,381,025 6,306,728B1 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXTK 120N25 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 220 120 VGS = 10V 7V 6V 110 100 180 160 80 I D - Amperes I D - Amperes 90 VGS = 10V 8V 7V 200 70 60 50 40 5V 120 100 80 60 30 20 40 10 20 0 0 0 0.5 1 6V 140 1.5 2 5V 0 2.5 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C 6 7 8 9 10 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 7V 6V 110 100 2.4 R D S (on) - Normalized 80 70 60 VGS = 10V 2.2 90 I D - Amperes 5 2.6 120 5V 50 40 30 2 1.8 I D = 120A 1.6 1.4 I D = 60A 1.2 1 20 0.8 10 0.6 0 0.4 0 1 2 3 4 5 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 130 2.4 120 VGS = 10V 2.2 110 TJ = 125ºC 2 100 90 I D - Amperes R D S (on) - Normalized 4 V D S - Volts V D S - Volts 1.8 1.6 1.4 80 70 60 50 40 1.2 TJ = 25ºC 30 20 1 10 0.8 0 0 20 40 60 80 100 120 140 160 180 200 220 I D - Amperes © 2003 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 120N25 Fig. 8. Transconductance Fig. 7. Input Adm ittance 140 200 180 120 TJ = -40ºC 25ºC 125ºC 100 140 g f s - Siemens I D - Amperes 160 120 100 80 60 80 60 40 TJ = 125ºC 25ºC -40ºC 40 20 20 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 20 40 60 V G S - Volts 200 10 180 9 160 8 140 7 120 100 TJ = 125ºC 60 100 120 140 160 180 200 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 80 80 I D - Amperes VDS = 125V I D = 60A I G = 10mA 6 5 4 3 40 2 TJ = 25ºC 20 1 0 0 0.4 0.6 0.8 1 1.2 1.4 0 50 100 150 200 250 300 350 Q G - nanoCoulombs V S D - Volts Fig. 12. Forw ard Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 TC = 25ºC R DS(on) Limit I D - Amperes Capacitance - pF C iss C oss 1000 25µs 100 1ms DC 10 C rss f = 1MHz 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXTK 120N25 Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce 0.18 0.16 R (th) J C - (ºC/W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 1 10 100 Puls e W idth - millis ec onds © 2003 IXYS All rights reserved 10 0 0 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXTN120N25