IXTN170P10P

IXTN170P10P PolarPTM Power MOSFET VDSS ID25 RDS(on) D P-Channel Enhancement Mode Avalanche Rated = =  -100V -170A  14m G S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M -100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C -170 A IDM TC = 25C, Pulse Width Limited by TJM - 510 A IA EAS TC = 25C TC = 25C -170 3.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight S G S D G = Gate S = Source D = Drain Either Source Terminal at miniBLOC can be used as Main or Kelvin Source. Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Rugged PolarPTM Process High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125C   V - 4.0 V 100 nA - 50 A - 250 A 14 m  Applications      © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99975C(5/17) IXTN170P10P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 35 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss 32 ns 75 ns 82 ns 45 ns 240 nC 45 nC 120 nC Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs nF pF RG = 1 (External) tf 12.6 pF VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25 td(off) S 930 Resistive Switching Times tr 58 4190 Crss td(on) SOT-227B (IXTN) Outline Qgd RthJC (M4 screws (4x) supplied) 0.14C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr -170 A Repetitive, Pulse Width Limited by TJM - 680 A IF = - 85A, VGS = 0V, Note 1 - 3.3 V 176 ns 1.25 C -14.2 A IF = - 85A, -di/dt = -100A/s QRM VR = - 50V, VGS = 0V IRM Note Characteristic Values Min. Typ. Max. 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN170P10P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -180 -300 VGS = -15V -10V - 9V -160 -140 - 9V -240 - 8V -210 -100 I D - Amperes -120 I D - Amperes VGS = -15V -10V -270 - 7V -80 - 6V -60 - 8V -180 -150 - 7V -120 -90 -40 - 6V -60 - 5V -20 -30 0 - 5V 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 -1 -2 -3 -4 2.2 -180 VGS = -15V -10V - 9V -7 -8 -9 -10 -11 VGS = -10V 2.0 1.8 -120 RDS(on) - Normalized -140 I D - Amperes -6 Fig. 4. RDS(on) Normalized to ID = - 85A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C -160 -5 VDS - Volts VDS - Volts - 8V -100 - 7V -80 -60 - 6V -40 I D = -170A 1.6 1.4 I D = - 85A 1.2 1.0 0.8 -20 0.6 - 5V 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0.4 -3.5 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 85A Value vs. Drain Current 2.0 VGS = -10V -15V 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -180 -160 o TJ = 125 C -140 1.6 -120 I D - Amperes RDS(on) - Normalized 1.8 25 TJ - Degrees Centigrade 1.4 1.2 -80 -60 -40 o TJ = 25 C 1.0 -100 -20 0 0.8 0 -40 -80 -120 -160 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -200 -240 -280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN170P10P Fig. 8. Transconductance Fig. 7. Input Admittance 100 -160 -140 -120 25 C o 125 C o 80 o 70 g f s - Siemens I D - Amperes o TJ = - 40 C 90 o TJ = - 40 C -100 -80 -60 25 C 60 o 125 C 50 40 30 -40 20 -20 10 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -270 -9 -240 -8 -210 -7 -180 -6 -150 o TJ = 125 C -90 -120 -140 -160 VDS = - 50V I D = - 85A I G = -1mA -5 -4 -3 o TJ = 25 C -60 -2 -30 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 40 VSD - Volts 80 120 160 200 240 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 1,000 100,000 100μs f = 1 MHz 25μs 1ms RDS(on) Limit 10ms Ciss - 100 10,000 I D - Amperes Capacitance - PicoFarads -100 Fig. 10. Gate Charge -10 VGS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode -300 -120 -80 I D - Amperes Coss 1,000 DC, 100ms -10 o TJ = 150 C Crss o TC = 25 C Single Pulse -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 -10 VDS - Volts - 100 IXTN170P10P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170P10P(B9) 3-25-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.