IXTN17N120L

LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 15 A IDM TC = 25°C, Pulse Width Limited by TJM 34 A IA TC = 25°C 8.5 A EAS TC = 25°C 2.5 J PD TC = 25°C 540 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 8.5A, Note 1 TJ = 125°C Designed for Linear Operations International Standard Package Molding Epoxies Meet UL94 V-0 Flammability Classification Guaranteed FBSOA at 60ºC miniBLOC with Aluminum Nitride Isolation Low RDS(on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Low Package Inductance Advantages V 6.0 V ±200 nA 50 μA 2 mA z z z Easy to Mount Space Savings High Power Density Applications 900 mΩ z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved D = Drain Programmable Loads Current Regulators DC-DC Convertors Battery Chargers DC Choppers Temperature and Lighting Controls DS99814C(05/10) IXTN17N120L Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.5 VDS = 20V, ID = 8.5A, Note 1 5.0 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 8.5A RG = 2Ω (External) Qg(on) Qgs VGS = 15V, VDS = 0.5 • VDSS, ID = 8.5A Qgd 6.5 SOT-227B (IXTN) Outline S 8300 pF 520 pF 90 pF 42 ns 31 ns 110 ns 83 ns 155 nC 41 nC 60 nC (M4 screws (4x) supplied) 0.23 °C/W RthJC RthCS °C/W 0.05 Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 800V, ID = 0.23A, TC = 60°C, tP = 3s 184 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 17 A ISM Repetitive, Pulse Width Limited by TJM 50 A VSD IF = 17A, VGS = 0V, Note 1 1.5 V trr IF = IS, -di/dt = 100A/μs, VR = 100V Note: 1830 ns 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN17N120L Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 35 18 VGS = 20V 14V 16 VGS = 20V 16V 14V 30 12V 14 ID - Amperes ID - Amperes 25 12 10V 10 8 9V 12V 20 15 10V 6 10 4 9V 8V 5 2 7V 0 8V 7V 0 0 2 4 6 8 10 12 14 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 8.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.2 18 VGS = 20V 14V 12V 16 VGS = 20V 2.8 R DS(on) - Normalized ID - Amperes 14 10V 12 10 9V 8 8V 6 2.4 I D = 17A 2.0 I D = 8.5A 1.6 1.2 4 7V 0.8 2 6V 5V 0 0 5 10 15 20 25 0.4 -50 30 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 8.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 16 2.8 2.6 VGS = 20V 14 TJ = 125ºC 2.4 ID - Amperes R DS(on) - Normalized 12 2.2 2.0 1.8 1.6 10 8 6 1.4 4 1.2 TJ = 25ºC 1.0 2 0.8 0 0 5 10 15 20 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 25 30 35 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN17N120L Fig. 7. Input Admittance Fig. 8. Transconductance 20 9 18 8 16 12 g f s - Siemens ID - Amperes 7 TJ = 125ºC 25ºC - 40ºC 14 TJ = - 40ºC, 25ºC, 125ºC 10 8 6 6 5 4 3 2 4 1 2 0 0 4 5 6 7 8 9 10 11 0 12 2 4 6 8 VGS - Volts 10 12 14 16 18 20 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 16 45 VDS = 600V 14 I D = 8.5A 40 I G = 10mA 12 VGS - Volts IS - Amperes 35 30 25 20 10 8 6 TJ = 125ºC 15 4 TJ = 25ºC 10 2 5 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 VSD - Volts 80 100 120 140 160 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 10,000 Ciss Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTN17N120L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 60ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 10 100µs ID - Am peres ID - Am peres 25µs 10 100µs 1ms 1ms 1 1 10ms 10ms TJ = 150ºC TC = 25ºC Single Pulse TJ = 150ºC 100ms DC 100ms TC = 60ºC Single Pulse DC 0.1 0.1 10 100 1000 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 10000 10 100 1000 10000 VDS - Volts IXYS REF: IXT_17N120L (8N)02-18-09-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.