IXTN200N10L2

Advance Technical Information IXTN200N10L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 100V = 178A ≤ 11mΩ Ω RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 100 V G VGSS Continuous ±20 V VGSM Transient ±30 V S D ID25 TC = 25°C 178 A IDM TC = 25°C, Pulse Width Limited by TJM 500 A IA EAS TC = 25°C TC = 25°C 100 5 A J PD TC = 25°C 830 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. -55 ... +150 150 -55 ... +150 °C °C °C Features 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 Minute t = 1 Second Weight G = Gate S = Source D = Drain • MiniBLOC with Aluminium Nitride Isolation • Designed for Linear Operation • International Standard Package Guaranteed FBSOA at 75°C • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) • Easy to Mount • Space Savings • High Power Density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 100 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 V 4.5 V ±200 nA TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved 10 μA 250 μA 11 mΩ Applications • • • • • • Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls DS100238(2/10) IXTN200N10L2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS= 10V, ID = 60A, Note 1 73 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 100A td(off) RG = 1Ω (External) tf Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 100A Qgd SOT-227B (IXTN) Outline 90 S 23 nF 3200 pF 610 pF 40 ns 225 ns 127 ns 27 ns 540 nC 115 nC 226 nC RthJC (M4 screws (4x) supplied) 0.15 °C/W RthCS 0.05 °C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 100V, ID = 5A, TC = 75°C , tp = 5s 500 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 A ISM Repetitive, Pulse Width Limited by TJM 800 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 100A, -di/dt = 100A/μs VR = 50V, VGS = 0V Note 245 24.4 3.0 ns A μC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTN200N10L2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 350 VGS = 20V VGS = 20V 14V 12V 10V 180 160 300 ID - Amperes ID - Amperes 250 8V 140 120 7V 100 12V 10V 80 60 8V 200 150 7V 100 6V 40 50 20 6V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 200 14 16 18 2.8 VGS = 20V 14V 12V 10V 160 VGS = 10V 2.4 R DS(on) - Normalized 180 140 ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 120 8V 100 80 60 6V 40 2.0 I D = 200A 1.6 I D = 100A 1.2 0.8 20 4V 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 4.0 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 200 VGS = 10V 2.2 20V TJ = 125ºC ---- 180 2.0 160 1.8 140 ID - Amperes R DS(on) - Normalized 10 VDS - Volts VDS - Volts 1.6 1.4 120 100 80 1.2 TJ = 25ºC 1.0 60 40 0.8 20 0.6 0 0 40 80 120 160 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 240 280 320 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN200N10L2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 TJ = - 40ºC 180 120 160 25ºC 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 125ºC 25ºC - 40ºC 80 60 125ºC 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 80 VGS - Volts 16 280 14 240 12 200 10 VGS - Volts IS - Amperes 120 140 160 180 200 220 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 320 160 120 TJ = 125ºC 80 100 ID - Amperes VDS = 50V I D = 100A I G = 10mA 8 6 4 TJ = 25ºC 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 100 VSD - Volts 200 300 400 500 600 700 800 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXTN200N10L2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ T C = 75ºC @ T C = 25ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 100µs 100 ID - Amperes 1ms 10ms ID - Amperes 100 1ms 10ms 100ms 10 DC 10 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 1 1 1 10 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: T_200N10L2(9R)1-26-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.