IXTN200N10T

Preliminary Technical Information IXTN200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS Continuous ±20 V VGSM Transient ± 30 V S G S D ID25 TC = 25°C 200 A ILRMS External lead current limit 100 A IDM TC = 25°C, pulse width limited by TJM 500 A IA TC = 25°C 40 A EAS TC = 25°C 1.5 J PD TC = 25°C 550 W -55 ... +175 °C Features TJM 175 °C z Tstg -55 ... +175 °C z 300 °C z 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md t = 1min t = 1s Mounting torque Terminal connection torque Weight = 100V = 200A ≤ 5.5mΩ Ω G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source z z z International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low RDS(ON) and QG Low package inductance Fast intrinsic Rectifier Advantages • Low gate charge drive requirement • High power density Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 150°C © 2008 IXYS CORPORATION, All rights reserved V 4.5 V ±200 nA 5 250 μA μA 5.5 mΩ • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor drives • Uninterrupted power supplies • High speed power switching applications DS99678A(09/08) IXTN200N10T Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd 96 S 9400 pF 1087 pF 140 pF 35 ns 31 ns 45 ns 34 ns 152 nC 47 nC 47 nC RthJC 0.27 RthCS °C/W °C/W 0.05 Source-Drain Diode SOT-227B Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 200 A ISM Repetitive, pulse width limited by TJM 500 A VSD IF = 50A, VGS = 0V, Note 1 1.0 V trr IRM QRM IF = 100A, -di/dt = 100A/μs, VR = 50V VGS = 0V 76 5.4 205 ns A nC Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN200N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 8V 180 160 250 ID - Amperes 140 ID - Amperes VGS = 10V 9V 8V 300 120 7V 100 80 6V 60 200 7V 150 100 6V 40 50 20 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 1 2 2.4 ID - Amperes 140 120 7V 100 80 6V 60 2.2 2.0 1.8 I D = 200A 1.6 I D = 100A 1.4 1.2 1.0 40 0.8 20 0.6 5V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current 110 VGS = 10V 75 100 125 150 175 External Lead Current Limit 100 15V - - - - 2.6 50 Fig. 6. Drain Current vs. Case Temperature 3.0 2.8 25 TJ - Degrees Centigrade VDS - Volts 90 TJ = 175ºC 2.4 80 2.2 ID - Amperes RDS(on) - Normalized 6 VGS = 10V 2.6 RDS(on) - Normalized 160 5 2.8 VGS = 10V 9V 8V 180 4 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 3 VDS - Volts VDS - Volts 2.0 1.8 1.6 1.4 70 60 50 40 30 1.2 20 1.0 10 TJ = 25ºC 0.8 0 0.6 0 40 80 120 160 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTN200N10T Fig. 8. Transconductance Fig. 7. Input Admittance 160 250 TJ = - 40ºC 225 140 200 120 g f s - Siemens ID - Amperes 175 150 125 TJ = 150ºC 25ºC - 40ºC 100 25ºC 100 150ºC 80 60 75 40 50 20 25 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 25 50 75 VGS - Volts 10 270 9 240 8 210 7 180 150 TJ = 150ºC 90 125 150 175 200 225 250 Fig. 10. Gate Charge 300 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 100 ID - Amperes VDS = 50V I D = 25A I G = 10mA 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1MHz Coss 1,000 0.10 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_200N10T(6V)9-30-08-D IXTN200N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 34 32 RG = 3.3Ω 33 RG = 3.3Ω 31 VGS = 10V 32 VGS = 10V VDS = 50V 31 VDS = 50V 30 29 I D t r - Nanoseconds t r - Nanoseconds 33 = 50A 28 27 26 I 25 D TJ = 25ºC 30 29 28 27 TJ = 125ºC 26 = 25A 25 24 24 23 23 22 22 25 35 45 55 65 75 85 95 105 115 24 125 26 28 30 32 TJ - Degrees Centigrade 220 I D = 50A 120 60 55 I D = 25A 80 50 60 45 40 40 20 35 0 4 6 8 10 12 14 16 18 60 34 55 I D = 50A 30 45 28 25 35 45 60 55 32 50 TJ = 125ºC 45 30 40 30 32 34 36 38 95 105 115 40 125 40 42 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 44 46 48 50 td(off) - - - - 275 TJ = 125ºC, VGS = 10V 160 t f - Nanoseconds 70 TJ = 25ºC 28 85 250 VDS = 50V 140 225 120 200 100 175 I D = 25A 80 I D 150 = 50A 60 125 40 100 20 75 0 t d ( o f f ) - Nanoseconds VDS = 50V TJ = 25ºC 26 75 300 tf 180 75 RG = 3.3Ω, VGS = 10V 65 24 65 200 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - 35 31 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 80 33 50 TJ - Degrees Centigrade tf 34 65 I D = 25A 36 20 38 36 50 70 38 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 125ºC 48 RG = 3.3Ω, VGS = 10V RG - Ohms 37 46 td(off) - - - - 32 30 2 44 VDS = 50V t f - Nanoseconds 65 100 42 t d ( o f f ) - Nanoseconds 70 140 40 75 VDS = 50V 160 40 75 tf 80 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 180 38 42 85 tr 36 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 200 34 ID - Amperes 50 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_200N10T(6V)9-30-08-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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