IXTN210P10T

Preliminary Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS(on) D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier trr = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns G S miniBLOC E153432 S S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C (Chip Capability) - 210 A ILRMS Lead Current Limit, RMS - 200 A IDM TC = 25°C, Pulse Width Limited by TJM - 800 A IA EAS TC = 25°C TC = 25°C -100 3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 830 W - 55 ... +150 150 - 55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque S V D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features International Standard Package Low Intrinsic Gate Resistance z miniBLOC with Aluminum Nitride Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Recitifier z Low RDS(ON) and QG z Weight z Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA -100 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±15V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V - 25 μA - 300 μA RDS(on) V - 4.5 V VGS = -10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications z z z z TJ = 125°C D = Drain z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 7.5 mΩ DS100408A(01/13) IXTN210P10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 60A, Note 1 90 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf RG = 1Ω (External) Qg(on) Qgs 150 S 69.5 nF 4070 pF 1100 pF 90 ns 98 ns 165 ns 55 ns 740 nC 200 nC 155 nC Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd SOT-227B (IXTN) Outline (M4 screws (4x) supplied) 0.15 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 210 A ISM Repetitive, Pulse Width Limited by TJM - 840 A VSD IF = -100A, VGS = 0V, Note 1 -1.4 V trr QRM IRM IF = -105A, -di/dt = -100A/μs VR = -100V, VGS = 0V Note 930 -12.4 200 ns nC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN210P10T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -220 -400 VGS = -10V - 8V - 7V -200 -180 - 7V -300 -160 - 6V -140 ID - Amperes ID - Amperes VGS = -10V -350 -120 -100 -80 - 5V -60 - 6V -250 -200 -150 -100 - 5V -40 -50 -20 - 4V - 4V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -2 -3 -4 -5 -6 -7 -8 -9 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = -105A Value vs. Junction Temperature -220 -10 2.2 VGS = -10V - 8V - 7V -200 -180 VGS = -10V 2.0 1.8 R DS(on) - Normalized -160 ID - Amperes -1 VDS - Volts - 6V -140 -120 -100 - 5V -80 I D = - 210A 1.6 I D = -105A 1.4 1.2 1.0 -60 0.8 -40 0.6 - 4V -20 0 0.4 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -105A Value vs. Drain Current 2.0 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -220 VGS = -10V -200 1.8 External Lead Current Limit -180 -160 TJ = 125ºC 1.6 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.4 1.2 -140 -120 -100 -80 -60 TJ = 25ºC -40 1.0 -20 0 0.8 0 -50 -100 -150 -200 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved -250 -300 -350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN210P10T Fig. 8. Transconductance Fig. 7. Input Admittance -300 300 -250 250 g f s - Siemens TJ = - 40ºC ID - Amperes -200 -150 TJ = 125ºC 25ºC - 40ºC -100 200 25ºC 150 125ºC 100 -50 50 0 0 -3 -3.5 -4 -4.5 -5 -5.5 -6 0 -50 -100 -150 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -250 -300 Fig. 10. Gate Charge -350 -10 VDS = - 50V -9 -300 I D = -105A -8 -250 I G = -1mA -7 VGS - Volts IS - Amperes -200 ID - Amperes -200 -150 TJ = 125ºC -100 -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 0 -1.4 100 VSD - Volts 200 300 400 500 600 700 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 - 1000 RDS(on) Limit 100µs Ciss Capacitance - PicoFarads f = 1 MHz ID - Amperes -100 10,000 Coss 1ms External Lead Current Limit 10ms - 10 Crss 1,000 TJ = 150ºC 100ms TC = 25ºC Single Pulse DC -1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTN210P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 120 120 110 RG = 1Ω, VGS = -10V RG = 1Ω, VGS = -10V VDS = - 50V VDS = - 50V I 100 90 I D D t r - Nanoseconds t r - Nanoseconds 110 = -100A = - 50A TJ = 125ºC 100 TJ = 25ºC 90 80 70 80 25 35 45 55 65 75 85 95 105 115 -50 125 -55 -60 -65 -70 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tf 300 600 VDS = - 50V 200 400 150 300 I D = - 50A 200 50 100 0 2 3 4 5 6 7 8 9 85 tf 80 RG = 1Ω, VGS = -10V td(off) - - - - 260 I D = - 50A 70 220 60 200 I D = -100A 55 160 45 140 25 35 45 260 400 60 180 50 40 -80 85 95 105 115 120 125 -85 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved -90 -95 td(off) - - - - TJ = 125ºC, VGS = -10V 800 VDS = - 50V I D = - 50A 300 600 I D = -100A 200 400 140 100 200 100 -100 0 TJ = 25ºC -75 75 1000 tf 220 -70 65 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds t f - Nanoseconds 500 t d(off) - Nanoseconds 70 -65 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 300 TJ = 125ºC -60 180 50 td(off) - - - - VDS = - 50V -55 240 65 10 t f - Nanoseconds tf RG = 1Ω, VGS = -10V -50 280 VDS = - 50V TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 80 -100 300 75 RG - Ohms 90 -95 320 40 0 1 -90 t d(off) - Nanoseconds 500 I D = -100A 100 -85 90 t d(off) - Nanoseconds t f - Nanoseconds 700 td(off) - - - - TJ = 125ºC, VGS = -10V 250 -80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature t f - Nanoseconds 350 -75 ID - Amperes TJ - Degrees Centigrade IXTN210P10T Fig. 19. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_210P10T(A9)10-26-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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