IXTN22N100L

LinearTM Power MOSFET w/ Extended FBSOA IXTN22N100L VDSS ID25 = 1000V = 22A ≤ 600mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V G VGSS Continuous ±30 V VGSM Transient ±40 V S D ID25 TC = 25°C 22 A IDM TC = 25°C, Pulse Width Limited by TJM 50 A IA EAS TC = 25°C TC = 25°C 22 1.5 A J PD TC = 25°C 700 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. -55 ... +150 150 -55 ... +150 °C °C °C Features 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 Minute t = 1 Second Weight G = Gate S = Source D = Drain • MiniBLOC with Aluminium Nitride Isolation • Designed for Linear Operation • International Standard Package • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) • Easy to Mount • Space Savings • High Power Density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 • IDSS, Note 1 3.0 5.5 V Applications V • • • • • • ±200 nA TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved 50 μA 1 mA 600 mΩ Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls DS99811B(10/10) IXTN22N100L Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • IDSS, Note 1 4.5 7.0 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS td(off) RG = 2Ω (External) tf Qg(on) Qgs VGS= 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 9.5 SOT-227B (IXTN) Outline S 7050 pF 600 pF 100 pF 36 ns 35 ns 80 ns 50 ns 270 nC 70 nC 110 nC RthJC (M4 screws (4x) supplied) 0.18 °C/W RthCS 0.05 °C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 800V, ID = 0.3A, TC = 90°C , tp = 5s 240 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 22 A ISM Repetitive, Pulse Width Limited by TJM 50 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr Note 1000 IF = IS, -di/dt = 100A/μs VR = 100V, VGS = 0V ns 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTN22N100L Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 22 45 VGS = 20V 14V 20 VGS = 20V 14V 40 18 30 14 ID - Amperes ID - Amperes 35 12V 16 10V 12 10 9V 8 12V 25 20 10V 15 6 8V 10 7V 5 4 2 6V 0 0 1 2 3 4 5 6 7 8 9 9V 8V 7V 0 10 11 12 0 5 10 15 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 22 3.2 VGS = 20V 12V 20 VGS = 20V 2.8 18 R DS(on) - Normalized 16 10V ID - Amperes 20 14 12 9V 10 8 8V 6 4 7V 2 6V 2.4 I D = 22A 2.0 I D = 11A 1.6 1.2 0.8 5V 0 0 5 10 15 0.4 20 25 -50 30 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current 25 3.0 VGS = 20V TJ = 125ºC 20 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 15 10 TJ = 25ºC 1.4 5 1.0 0.6 0 0 4 8 12 16 20 24 28 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 32 36 40 44 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN22N100L Fig. 8. Transconductance Fig. 7. Input Admittance 20 14 18 TJ = - 40ºC 12 16 TJ = 125ºC 25ºC - 40ºC 12 10 g f s - Siemens ID - Amperes 14 10 8 6 25ºC 8 125ºC 6 4 4 2 2 0 0 3 4 5 6 7 8 9 10 0 11 5 10 15 20 25 30 35 40 ID - Amperes VGS - Volts Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 70 VDS = 500V 14 60 I D = 11A I G = 10mA 12 V GS - Volts IS - Amperes 50 40 30 10 8 6 TJ = 125ºC 20 4 TJ = 25ºC 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 40 80 120 160 200 240 280 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1.000 10,000 1,000 0.100 Z (th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 100 0.010 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXTN22N100L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 90ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 10 100µs ID - Amperes ID - Amperes 10 1ms 1ms 10ms 1 1 DC 10ms TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 90ºC Single Pulse DC 0.1 0 10 100 1,000 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 10,000 10 100 1,000 10,000 VDS - Volts IXYS REF: T_22N100L(8N)3-19-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.