IXTN240N075L2

Advance Technical Information IXTN240N075L2 LinearL2TM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated S = = < 75V 225A  7m miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 75 V VDGR TJ = 25C to 150C, RGS = 1M 75 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, pulse width limited by TJM 225 200 720 A A A IA EAS TC = 25C TC = 25C 240 3 A J PD TC = 25C 735 W TJ -55...+150  TJM 150  C -55...+150  C 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. C Tstg VISOL S D Features 2500 3000 V~ V~  Designed for Linear Operation  International Standard Package 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in  Avalanche Rated  Molding Epoxy Meets UL94 V-0 30 g t = 1 minute t = 1 second Weight  Guaranteed FBSOA at 75°C Flammability Classification  MiniBLOC with Aluminium Nitride Isolation Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 75 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 120A, Note 1 V 4.5 V 200 nA  Easy to mount  Space savings  High power density Applications 10  A 50 A  7 m     © 2016 IXYS CORPORATION, All rights reserved Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators DS100770(12/16) IXTN240N075L2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 86 Ciss Coss 19 VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 120A RG = 1 (External) Qg(on) Qgs 110 VGS = 10V, VDS = 0.5 • VDSS, ID = 120A Qgd M4-7 NUT (4 PLACES) J K S nF 4420 pF 1470 pF 34 ns 200 ns 136 ns 47 ns 546 nC 86 nC 225 nC RthJC TO-227 Outline B A D T c VMWN S E F G H P NUT MATERIAL: STANDARD - Low carbon steel with Ni plating. OPTIONAL - Brass Nut is available PART NUMBER-BN Q O R U 0.17 C/W RthCS 0.05      C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 75V, ID = 5.9A, TC = 75C, Tp = 5s 440 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 240 A ISM Repetitive, pulse width limited by TJM 960 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 120A, -di/dt = 100A/s, VR = 37.5V, VGS = 0V Note: 206 18.8 1.9 ns A μC 1. Pulse test, t  300s; duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN240N075L2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 VGS = 20V 12V 10V 9V 800 11V 10V 7V 160 I D - Amperes I D - Amperes 200 VGS = 20V 13V 8V 120 6V 600 9V 8V 400 80 7V 200 40 6V 5V 5V 4V 0 0.0 0.5 1.0 0 1.5 2.0 0 2 4 6 8 VDS - Volts 2.2 240 VGS = 20V 15V 12V 10V 9V 8V 14 16 18 20 VGS = 10V 2.0 7V R DS(on) - Normalized I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 200 10 VDS - Volts 160 6V 120 80 1.8 1.6 I D = 240A 1.4 I D = 120A 1.2 1.0 5V 40 0.8 4V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 -50 3.0 -25 0 Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current 75 100 125 150 125 150 220 200 VGS = 10V 20V External Lead Limit 180 160 2.2 ID - Amperes RDS(on) - Normalized 50 Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 2.6 25 TJ - Degrees Centigrade VDS - Volts TJ = 125ºC 1.8 140 120 100 80 1.4 60 TJ = 25ºC 40 1.0 20 0.6 0 0 100 200 300 400 500 I D - Amperes © 2016 IXYS CORPORATION, All rights reserved 600 700 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN240N075L2 Fig. 8. Transconductance Fig. 7. Input Admittance 220 600 TJ = - 40ºC 200 180 TJ = - 40ºC 25ºC 125ºC 400 160 g f s - Siemens I D - Amperes 500 300 200 25ºC 140 125ºC 120 100 80 60 40 100 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 100 200 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 400 500 600 Fig. 10. Gate Charge 10 800 VDS = 37.5V 9 700 I D = 120A 8 I G = 10mA 600 7 TJ = 25ºC 500 VGS - Volts I S - Amperes 300 I D - Amperes TJ = 125ºC 400 300 6 5 4 3 200 2 100 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 50 100 150 200 250 300 350 400 450 500 550 Fig. 12. Maximum Transient Thermal Impedance VSD - Volts QG - NanoCoulombs 1 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance aaaaa 0.3 100,000 0.1 C iss Z(th)JC - K / W Capacitance - PicoFarads f = 1 MHz 10,000 C oss 0.01 C rss 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTK240N075L2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1,000 1,000 25µs RDS(on) Limit RDS(on) Limit 25µs 100µs 100µs I D - Amperes 1ms 10ms 100ms 10 DC 100 I D - Amperes 100 1ms 10ms 10 100ms TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse DC 1 1 1 10 VDS - Volts © 2016 IXYS CORPORATION, All rights reserved 100 1 10 100 VDS - Volts IXYS REF: T_240N075L2(9R-T07)12-13-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.