IXTN400N15X4

IXTN400N15X4 X4-Class Power MOSFETTM VDSS ID25 150V 400A  2.35m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = G S S miniBLOC, SOT-227 E153432  S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 150 150 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 400 200 900 A A A IA EAS TC = 25C TC = 25C 200 3 A J PD TC = 25C 830 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +175 175 -55 ... +175 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight G S D G = Gate S = Source D = Drain Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Low QG Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 150 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 TJ = 150C ©2019 IXYS CORPORATION, All Rights Reserved V 4.5 V 200 nA 25 A 2 mA 2.35 High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  m DS100910C(11/19) IXTN400N15X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 100 Ciss Coss 170 S 1.2  14.5 nF 3.1 nF 8.0 pF 2500 9400 pF pF 40 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Co(er) Co(tr) td(on) tr td(off) tf Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 22 ns 180 ns 8 ns 430 nC 100 nC 100 nC RthJC 0.18C/W RthCS 0.05C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A , VGS = 0V, Note 1 trr QRM IRM 400 A 1600 A 1.4 V 175 IF = 150A, -di/dt = 100A/s 1.1 VR = 100V, VGS = 0V 12.3 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN400N15X4 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 400 1000 VGS = 10V 8V 350 VGS = 10V 900 7V 9V 8V 800 300 I D - Amperes I D - Amperes 700 250 200 6V 150 7V 600 500 400 300 6V 100 200 50 5V 100 0 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4 VDS - Volts 2.4 400 VGS = 10V 8V 350 7 8 9 10 VGS = 10V 2.2 7V 2.0 250 RDS(on) - Normalized 300 I D - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 200A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 6V 200 150 5V 100 1.8 I D = 400A 1.6 I D = 200A 1.4 1.2 1.0 50 0.8 4V 0.6 0 0 2.6 2.4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 1.8 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 200A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 2.0 BVDSS / VGS(th) - Normalized 2.2 RDS(on) - Normalized 5 VDS - Volts o TJ = 150 C 1.8 1.6 1.4 o 1.2 TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.8 0.5 0.6 0 100 200 300 400 500 600 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 700 800 900 1000 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTN400N15X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 400 240 External Lead Current Limit 300 I D - Amperes 160 I D - Amperes VDS = 10V 350 200 120 80 250 o TJ = 150 C 200 o 25 C o - 40 C 150 100 40 50 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 500 800 o VDS = 10V 450 TJ = - 40 C 700 400 600 o TJ = 25 C o 25 C 300 I S - Amperes g f s - Siemens 350 250 o 150 C 200 500 o TJ = 150 C 400 300 150 200 100 100 50 0 0 0 50 100 150 200 250 300 350 400 450 0.2 0.4 0.6 0.8 1.0 I D - Amperes 1.4 1.6 1.8 2.0 2.2 2.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 75V Capacitance - PicoFarads I D = 200A 8 I G = 10mA 7 VGS - Volts 1.2 VSD - Volts 6 5 4 3 2 Ciss 10,000 Coss 1,000 Crss 100 10 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTN400N15X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1,000 28 RDS(on) Limit 25μs 24 100 External Lead Limit I D - Amperes E OSS - MicroJoules 100μs 20 16 12 10 8 1ms o TJ = 175 C o TC = 25 C Single Pulse 4 0 1 0 20 40 60 80 10ms 1 Fig. 15. Maximum Transient Thermal Impedance 100 120 140 1 DC 10 100 100ms 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_400N15X4 (191-S201) 4-22-19-A IXTN400N15X4 SOT-227 Outline J A M4-7 NUT (4 PLACES) B D C M N S L E F G H O U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTN400N15X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved