IXTN40P50P

IXTN40P50P PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = =  - 500V - 40A  230m D RDS(on) S miniBLOC, SOT-227 E153432 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS TC = 25C TC = 25C dv/dt IS  IDM, VDD  VDSS, TJ  150C PD TC = 25C TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque G S D - 40 A - 120 A - 40 3.5 A J 10 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in  30 g  t = 1 minute t = 1 second Weight G = Gate S = Source D = Drain Either Source Terminal at miniBLOC can be used as Main or Kelvin Source. Features    International Standard Package miniBLOC, with Aluminium Nitride Isolation Rugged PolarPTM Process Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 500 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 V - 4.5 V 100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved - 50 A - 250 A Easy to Mount Space Savings High Power Density Applications      High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 230 m DS99936D(4/15) IXTN40P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise specified) Characteristic Values Min. Typ. Max. gfs 23 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss 38 S 11.5 nF 1150 pF 93 pF 37 ns 59 ns 90 ns 34 ns 205 nC 55 nC 75 nC Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs SOT-227B (IXTN) Outline Qgd RthJC (M4 screws (4x) supplied) 0.14C/W RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 40 A ISM Repetitive, Pulse Width Limited by TJM -160 A VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V trr 14.5 VR = -100V, VGS = 0V IRM Note 477 IF = - 20A, -di/dt = -150A/s QRM 1: - 61 ns  C A Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN40P50P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC -90 -40 VGS = -10V - 7V -35 -70 I D - Amperes -30 I D - Amperes VGS = -10V -80 -25 - 6V -20 -15 - 7V -60 -50 -40 - 6V -30 -10 -20 -5 - 5V -10 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -9 -5 -10 -15 -20 -25 -30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = - 20A Value vs. Junction Temperature 2.4 -40 VGS = -10V - 7V -35 VGS = -10V 2.0 -25 RDS(on) - Normalized I D - Amperes -30 - 6V -20 -15 I D = - 40A 1.6 I D = - 20A 1.2 -10 0.8 - 5V -5 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 20A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 -45 -40 VGS = -10V 2.2 TJ = 125ºC -35 I D - Amperes 2.0 RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 -30 -25 -20 -15 1.2 -10 TJ = 25ºC 1.0 -5 0 0.8 0 -10 -20 -30 -40 -50 -60 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved -70 -80 -90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN40P50P Fig. 7. Input Admittance Fig. 8. Transconductance -70 70 -60 60 -50 50 25ºC g f s - Siemens I D - Amperes TJ = - 40ºC -40 TJ = 125ºC 25ºC - 40ºC -30 -20 40 125ºC 30 20 -10 10 0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -10 -20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -40 -50 -60 -70 Fig. 10. Gate Charge -140 -10 -9 VDS = - 250V -8 I D = - 20A -120 I G = -1mA -100 -7 VGS - Volts I S - Amperes -30 I D - Amperes -80 -60 TJ = 125ºC -40 -6 -5 -4 -3 TJ = 25ºC -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 20 40 VSD - Volts 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 1000 100,000 f = 1 MHz RDS(on) Limit - 100 25µs I D - Amperes Capacitance - PicoFarads C iss 10,000 C oss 1,000 100µs - 10 1ms 10ms 100ms 100 -1 TJ = 150ºC C rss DC TC = 25ºC Single Pulse 10 - 0.1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 10 - 100 VDS - Volts - 1000 IXTN40P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_40P50P(B9) 03-06-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.