IXTN600N04T2

IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.3mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient ±20 V ID25 TC = 25°C (Chip Capability) 600 A IL(RMS) IDM External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 200 1800 A A IA EAS TC = 25°C TC = 25°C 200 3 A J PD TC = 25°C 940 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features z z z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. z z BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 1.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved V Applications 3.5 V ±200 nA z 10 μA 1 mA z 1.3 mΩ Easy to Mount Space Savings High Power Density z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100172B(10/12) IXTN600N04T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 10V, ID = 60A, Note 1 SOT-227B (IXTN) Outline 150 S 40 nF 6400 pF 1470 pF 1.32 Ω 40 ns 20 ns 90 ns tf 250 ns Qg(on) 590 nC 127 nC 163 nC Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss Crss RGI Gate Input Resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 200A td(off) RG = 1Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgs Qgd (M4 screws (4x) supplied) 0.16 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V -di/dt = 100A/μs VR = 20V QRM Note 1. 600 A 1800 A 1.2 V 100 3.3 ns A 165 nC Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN600N04T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 400 VGS = 15V 10V 7V 300 VGS = 15V 350 250 6V 200 150 ID - Amperes ID - Amperes 10V 7V 6V 300 5V 100 250 5V 200 4.5V 150 100 4.5V 50 4V 50 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.0 0.5 0.5 1.0 Fig. 3. Output Characteristics @ T J = 150ºC 2.0 2.5 3.0 Fig. 4. Normalized RDS(on) vs. Junction Temperature 350 2.0 VGS = 15V 10V 7V 300 VGS = 10V 1.8 R DS(on) - Normalized 250 ID - Amperes 1.5 VDS - Volts VDS - Volts 6V 200 5V 150 4V 100 50 I D < 600A 1.6 1.4 1.2 1.0 0.8 3V 0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 VDS - Volts Fig. 5. Normalized RDS(on) vs. Drain Current 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.0 220 VGS = 10V 15V 1.8 200 External Lead Current Limit 180 160 1.6 TJ = 175ºC ID - Amperes R DS(on) - Normalized 50 TJ - Degrees Centigrade 1.4 1.2 140 120 100 80 60 TJ = 25ºC 40 1.0 20 0.8 0 0 50 100 150 200 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTN600N04T2 Fig. 8. Transconductance Fig. 7. Input Admittance 240 200 TJ = - 40ºC 180 200 160 120 g f s - Siemens ID - Amperes 25ºC TJ = 150ºC 25ºC - 40ºC 140 100 80 160 150ºC 120 80 60 40 40 20 0 0 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 350 VDS = 20V 9 I D = 300A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 VSD - Volts 300 400 500 600 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100.0 1,000 25µs 10.0 ID - Amperes Capacitance - NanoFarads RDS(on) Limit Ciss Coss 1.0 Crss 100µs External Lead Limit 100 1ms 10ms 10 100ms TJ = 175ºC DC TC = 25ºC f = 1 MHz Single Pulse 0.1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 VDS - Volts 100 IXTN600N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 100 90 RG = 1Ω , VGS = 10V 80 VDS = 20V 80 t r - Nanoseconds 70 t r - Nanoseconds RG = 1Ω , VGS = 10V 90 VDS = 20V 60 I 50 D = 200A 40 I 30 D = 100A 70 TJ = 125ºC 60 50 40 30 20 20 10 10 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 td(on) - - - - I D = 100A 60 100 40 0 4 5 6 7 8 9 250 130 200 I D = 100A 150 110 100 100 50 90 25 10 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - RG = 1Ω, VGS = 10V 200 800 180 700 250 140 200 120 TJ = 125ºC, 25ºC t d(off) - Nanoseconds 160 300 200 200 100 100 40 200 0 160 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 180 600 300 60 140 VDS = 20V 400 50 120 700 I D = 200A, 100A 400 80 100 td(off) - - - - 500 100 80 tf TJ = 125ºC, VGS = 10V 500 100 60 800 600 150 0 80 125 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 20V 300 120 I D = 200A RG - Ohms 350 40 140 0 20 3 400 t f - Nanoseconds t f - Nanoseconds 80 t f - Nanoseconds t r - Nanoseconds 300 150 t d(off) - Nanoseconds I D = 200A t d(on) - Nanoseconds 100 td(off) - - - - VDS = 20V 300 400 2 200 RG = 1Ω, VGS = 10V VDS = 20V 1 180 160 tf 350 120 TJ = 125ºC, VGS = 10V 200 160 400 140 500 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXTN600N04T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z(th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_600N04T2 (V9)11-05-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.