IXTN60N50L2

IXTN60N50L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 RDS(on) N-Channel Enhancement Mode Extended FBSOA S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V G VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, pulse width limited by TJM IA EAS PD 53 A 150 A TC = 25C TC = 25C 60 3 A J TC = 25C 735 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg 50/60 Hz, RMS IISOL  1mA Md Mounting torque Terminal Connection torque 500V 53A  100m miniBLOC, SOT-227 E153432 Symbol VISOL = =  t = 1 minute t = 1 second Weight S D G = Gate S = Source Either source terminal S can be used as the source terminal or the Kelvin source (gate return) terminal. Features  Designed for linear operation  International standard package  Molding epoxy meets UL94 V-0 flammability classification  miniBLOC with Aluminium nitride  Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 30A, Note 1 TJ = 125C V 4.5 V 200 nA 50  A 5 mA 100 m D = Drain isolation Guaranteed FBSOA at 75C Applications       Programmable loads Current regulators DC-DC converters Battery chargers DC choppers Temperature and lighting controls Advantages  Easy to mount  Space savings  High power density © 2015 IXYS CORPORATION, All Rights Reserved DS100086A(5/15) IXTN60N50L2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 10V, ID = 30A, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf nF 1325 pF 172 pF 40 ns 40 ns 165 ns 38 ns 610 nC 130 nC 365 nC Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 30A RG = 0.5 (External) Qg(on) Qgs S 24 Crss td(on) 32 VGS = 10V, VDS = 0.5 • VDSS, ID = 30A Qgd RthJC SOT-227B (IXTN) Outline (M4 screws (4x) supplied) 0.17C/W RthCS 0.05 C/W Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 400V, ID = 0.9A, TC = 75°C, tp = 3s 360 Typ. Max. W Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM IF = 60A, -di/dt = 100A/s QRM VR = 100V, VGS = 0V 60 A 240 A 1.5 V 980 73 ns A 35.8 μC Note 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN60N50L2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 60 160 VGS = 20V 14V 12V 10V VGS = 20V 14V 12V 140 9V 120 40 I D - Amperes I D - Amperes 50 8V 30 7V 20 10V 100 9V 80 60 8V 40 10 7V 6V 20 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6V 0 4.5 5.0 0 5 10 VDS - Volts 20 25 30 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 60 2.8 VGS = 20V 12V 10V 9V VGS = 10V 2.4 RDS(on) - Normalized 50 I D - Amperes 15 VDS - Volts 8V 40 30 7V 20 2.0 I D = 60A I D = 30A 1.6 1.2 6V 10 0.8 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 60 VGS = 10V 20V TJ = 125ºC ---- 50 I D - Amperes R DS(on) - Normalized 2.4 2.0 1.6 40 30 20 TJ = 25ºC 1.2 10 0.8 0 0 20 40 60 80 100 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN60N50L2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 TJ = - 40ºC 50 90 80 60 g f s - Siemens I D - Amperes 25ºC 40 70 TJ = 125ºC 25ºC - 40ºC 50 40 125ºC 30 20 30 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 110 Fig. 10. Gate Charge 16 200 VDS = 250V 14 I D = 30A 160 I G = 10mA VGS - Volts 12 I S - Amperes 50 I D - Amperes 120 80 TJ = 125ºC 8 6 4 TJ = 25ºC 40 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 100 200 VSD - Volts 300 400 500 600 700 800 900 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 0.1 0.01 1,000 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTN60N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1000 1000 RDS(on) Limit RDS(on) Limit 100 100 25µs 100µs I D - Amperes I D - Amperes 25µs 1ms 10 10ms 100µs 10 1ms 10ms 100ms 100ms 1 1 DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse DC TC = 75ºC Single Pulse 0.1 0.1 10 100 VDS - Volts © 2015 IXYS CORPORATION, All Rights Reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_60N50L2(9R)01-20-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.