IXTN660N04T4

Advance Technical Information IXTN660N04T4 TrenchT4TM Power MOSFET VDSS ID25 G S S miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 15 V ID25 TC = 25C (Chip Capability) 660 A IL(RMS) External Lead Current Limit 200 A IDM TC = 25C, Pulse Width Limited by TJM 1800 A IA EAS TC = 25C TC = 25C 330 5 A J PD TC = 25C 1040 W Maximum Ratings -55 ... +175 175 -55 ... +175 C C C 2500 3000 V~ V~ TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA 40V 660A  0.85m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features         International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 150C VGS = 10V, ID = 100A, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved   V 4.0 V 200 nA  Easy to Mount Space Savings High Power Density Applications 10 A 1.5 mA  0.85 m   DC-DC Converters and Offi-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100728A(7/16) IXTN660N04T4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 110 Ciss 180 S 44.0 nF 6.5 nF 3.5 nF 2.5  40 ns 430 ns 386 ns tf 260 ns Qg(on) 860 nC 240 nC 290 nC Coss VGS = 0V, VDS = 25V, f = 1MHz SOT-227B (IXTN) Outline Crss RGI td(on) tr td(off) Qgs Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd RthJC (M4 screws (4x) supplied) 0.144C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/s VR = 30V 660 A 2640 A 1.4 V 60 2.1 ns A 63 nC Note 1. Pulse test, t  300s, duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN660N04T4 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 1000 VGS = 15V 10V 300 VGS = 15V 10V 8V 9V 800 8V 7V I D - Amperes I D - Amperes 250 200 6.5V 150 600 7V 400 100 6V 200 50 6V 5V 0 0 0 0.05 0.1 0.15 0.2 0 0.25 0.1 0.2 0.3 0.4 0.6 0.7 0.8 0.9 1 Fig. 4. Normalized RDS(on) vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 1.6 350 VGS = 15V 10V 8V 300 VGS = 10V R DS(on) - Normalized 200 ID > 100A 1.4 7V 250 I D - Amperes 0.5 VDS - Volts VDS - Volts 6V 150 100 1.2 1.0 0.8 5V 50 0.6 0 0 0.05 1.8 0.1 0.15 0.2 0.25 0.3 -50 0.35 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 100A vs. Drain Current Fig. 6. Drain Current vs. Case Temperature VGS = 10V 15V 175 200 160 TJ = 175ºC I D - Amperes RDS(on) - Normalized 1.6 1.4 1.2 120 80 TJ = 25ºC 1.0 40 0 0.8 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTN660N04T4 Fig. 8. Transconductance Fig. 7. Input Admittance 800 800 VDS = 5V 700 TJ = - 40ºC VDS = 5V 700 600 600 g f s - Siemens I D - Amperes 25ºC 500 400 300 TJ = 150ºC 25ºC 200 - 40ºC 500 150ºC 400 300 200 100 100 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 100 200 300 VGS - Volts 400 500 600 700 800 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 1000 10 VDS = 20V 9 800 I D = 330A 8 I G = 10mA 600 VGS - Volts I S - Amperes 7 400 TJ = 150ºC 6 5 4 3 TJ = 25ºC 200 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 400 500 600 700 800 900 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 RDS(on) Limit Ciss 100µs 1,000 100µs 10 I D - Amperes Capacitance - NanoFarads 300 QG - NanoCoulombs VSD - Volts Coss External Lead Current Limit 100 1ms 10 TJ = 175ºC Crss f = 1 MHz TC = 25ºC 10ms DC Single Pulse 1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTN660N04T4 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 1400 1200 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V VDS = 20V VDS = 20V 1000 I D = 660A 1000 t r - Nanoseconds t r - Nanoseconds 1200 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 800 600 TJ = 150ºC 800 TJ = 25ºC 600 I D = 330A 400 400 200 200 25 50 75 100 125 150 320 360 400 440 480 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 1600 180 td(on) 160 TJ = 150ºC, VGS = 10V 1400 VDS = 20V t r - Nanoseconds 100 I D = 660A 80 I D = 330A 600 60 400 40 200 20 0 440 4 5 6 7 8 9 480 320 440 I D = 330A 300 400 I D = 660A 280 360 320 I D = 330A 240 25 10 50 75 100 280 150 125 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 680 1600 td(off) 360 TJ = 25ºC 240 280 200 360 400 440 480 520 560 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 600 640 200 680 t f - Nanoseconds 440 td(off) 700 VDS = 20V 600 1000 500 800 400 I D = 330A I D = 660A 600 300 400 200 200 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 320 t d(off) - Nanoseconds 520 TJ = 150ºC 800 TJ = 150ºC, VGS = 10V 1200 360 280 tf 1400 600 VDS = 20V t f - Nanoseconds VDS = 20V TJ - Degrees Centigrade RG = 1Ω, VGS = 10V 320 520 RG - Ohms 400 680 560 td(off) 260 0 3 640 t d(off) - Nanoseconds 1000 t d(on) - Nanoseconds 120 2 600 RG = 1Ω, VGS = 10V 340 1200 1 tf 360 140 800 560 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 380 t f - Nanoseconds 1800 520 I D - Amperes IXTN660N04T4 Fig. 19. Maximum Transient Thermal Impedance 1 Fig. 19. Maximum Transient Thermal Impedance aaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_660N04T4 (T9-M04)5-16-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.