IXTN8N150L

IXTN8N150L LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 RDS(on) D = 1500V = 7.5A  3.6 G N-Channel Enhancement Mode Guaranteed FBSOA S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 7.5 A IDM TC = 25C, Pulse Width Limited by TJM 20 A PD TC = 25C 545 W -55 to +150  C TJM 150  C Tstg -55 to +150  C TJ VISOL Md 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Weight S D G = Gate S = Source D = Drain S = Source Features         Designed for Linear Operations International Standard Package Molding Epoxies Meet UL94 V-0 Flammability Classification Guaranteed FBSOA at 60ºC miniBLOC with Aluminum Nitride Isolation Low RDS(on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1500 VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 4A, Note 1 5.0 TJ = 125C   V 8.0 V 200 nA 25 A 500  A 3.6   Applications       © 2021 Littelfuse, Inc. Easy to Mount Space Savings High Power Density Programmable Loads Current Regulators DC-DC Convertors Battery Chargers DC Choppers Temperature and Lighting Controls DS99815C(02/21) IXTN8N150L Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS= 50V, ID = 4A, Note 1 1.4 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 2.3 tr td(off) tf 405 pF 70 pF 36 ns 18 ns 90 ns 95 ns 250 nC 80 nC 116 nC Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 4A RG = 2 (External) Qg(on) Qgs VGS= 15V, VDS = 0.5 • VDSS, ID = 4A Qgd S pF Crss td(on) 3.2 8000 0.23 C/W RthJC RthCS C/W 0.05 Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 1500V, ID = 0.17A, TC = 60C, TP = 3s 255 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 8A, VGS = 0V, Note 1 trr IF = IS, -di/dt = 100A/s, VR = 100V 1700 8 A 32 A 1.2 V ns Note: 1. Pulse Test, t  300s; Duty Cycle, d  2%. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTN8N150L Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Extended Output Characteristics @ TJ = 25ºC 10 V GS = 20V 8 14V VGS = 20V 7 6 12V I D - Amperes I D - Amperes 8 6 12V 4 5 4 3 10V 2 2 10V 9V 0 0 4 8 12 16 20 24 9V 1 8V 0 28 0 32 5 10 15 20 30 35 40 Fig. 3. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature 50 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Drain Current 2.4 2.8 VGS = 20V 2.2 2.4 TJ = 125ºC 2.0 RDS(on) - Normalized I D = 8A 2.0 I D = 4A 1.6 1.2 1.8 VGS = 20V 1.6 1.4 1.2 0.8 TJ = 25ºC 1.0 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 TJ - Degrees Centigrade 6 7 8 9 10 11 I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 8 9 7 8 VDS = 50V 7 6 TJ = 125ºC 25ºC - 40ºC 6 5 I D - Amperes I D - Amperes 45 VDS - Volts VDS - Volts RDS(on) - Normalized 25 4 3 5 4 3 2 2 1 1 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2021 Littelfuse, Inc. 100 125 150 6 7 8 9 10 VGS - Volts 11 12 13 14 IXTN8N150L Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 4.5 28 TJ = - 40ºC V DS = 50V 4.0 24 3.5 I S - Amperes g f s - Siemens 20 25ºC 3.0 125ºC 2.5 2.0 1.5 16 12 TJ = 125ºC 8 TJ = 25ºC 1.0 4 0.5 0 0.0 0 1 2 3 4 5 6 7 8 0.4 9 0.5 0.6 0.7 0.9 1.0 Fig. 10. Capacitance Fig. 9. Gate Charge 20 100,000 f = 1 MHz Capacitance - PicoFarads V DS = 750V I D = 4A I G = 10mA 15 VGS - Volts 0.8 VSD - Volts I D - Amperes 10 5 Ciss 10,000 1,000 Coss 100 Crss 0 10 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_8N15L(8N)01-30-09 IXTN8N150L Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 13. Forward-Bias Safe Operating Area @ TC = 60ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 10 10 25µs I D - Amperes I D - Amperes 100µs 1ms 10ms 1 100µs 1ms 1 10ms TJ = 150ºC TC = 25ºC Single Pulse TJ = 150ºC TC = 60ºC Single Pulse 100ms DC 100ms DC 0.1 10 100 1,000 VDS - Volts © 2021 Littelfuse, Inc. 10,000 0.1 10 100 1,000 10,000 VDS - Volts IXYS REF: T_8N150L (8N) 2-25-21 IXTN8N150L SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions, and dimensions.