IXTN90N25L2

IXTN90N25L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 250V = 90A  36m  RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V S D ID25 TC = 25C 90 A IDM TC = 25C, Pulse Width Limited by TJM 360 A IA EAS TC = 25C TC = 25C 45 3 A J PD TC = 25C 735 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. -55 ... +150 150 -55 ... +150 C C C Features 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight G = Gate S = Source D = Drain  Designed for Linear Operation  International Standard Package  Guaranteed FBSOA at 75°C  Avalanche Rated  Molding Epoxy Meets UL94 V-0 Flammability Classification  MiniBLOC with Aluminium Nitride Isolation Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS = 20V, VDS = 0V 200 nA IDSS VDS = VDSS, VGS = 0V 50 A 2.5 mA RDS(on) VGS = 10V, ID = 45A, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved V 4.5 V  Programmable Loads  Current Regulators  DC-DC Converters  Battery Chargers  DC Choppers  Temperature and Lighting Controls Advantages  Easy to Mount  Space Savings  High Power Density 36 m DS100103A(4/16) IXTN90N25L2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 VDS = 10V, ID = 0.5 • ID25, Note 1 50 Ciss Coss tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz nF 2140 pF 360 pF 50 ns 175 ns 40 ns 160 ns 640 nC 125 nC 385 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs S 23 Crss td(on) 65 SOT-227B (IXTN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC (M4 screws (4x) supplied) 0.17C/W RthCS C/W 0.05 Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 250V, ID = 1.4A, TC = 75°C, tp = 3s 350 Typ. Max. W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 90 A Repetitive, Pulse Width Limited by TJM 360 A VSD IF = 45A, VGS = 0V, Note 1 1.5 V trr IRM IF = 45A, -di/dt = 100A/s QRM Note: VR = 80V, VGS = 0V 266 23 ns A 3.0 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTN90N25L2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 90 VGS = 20V 12V 10V 80 9V 250 8V 200 VGS = 20V 14V 12V 10V 60 I D - Amperes I D - Amperes 70 50 40 7V 9V 150 8V 100 30 6V 20 7V 50 10 5V 6V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 VDS - Volts 20 25 30 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 90 2.4 VGS = 20V 12V 10V 9V 80 70 VGS = 10V 2.2 2.0 8V RDS(on) - Normalized I D - Amperes 15 VDS - Volts 60 50 7V 40 30 1.8 I D = 90A 1.6 I D = 45A 1.4 1.2 6V 20 1.0 10 0.8 5V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current 100 2.6 VGS = 10V 2.4 90 80 2.2 TJ = 125ºC 70 2.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 1.4 60 50 40 30 1.2 TJ = 25ºC 20 1.0 10 0 0.8 0 20 40 60 80 100 120 140 160 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 180 200 220 240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN90N25L2 Fig. 7. Input Admittance Fig. 8. Transconductance 160 120 TJ = - 40ºC 140 100 25ºC TJ = 125ºC 25ºC - 40ºC 100 80 g f s - Siemens I D - Amperes 120 80 60 125ºC 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 20 40 60 VGS - Volts 80 100 120 140 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 280 VDS = 125V 14 240 I D = 45A I G = 10mA 12 VGS - Volts I S - Amperes 200 160 120 10 8 6 80 TJ = 125ºC 4 40 TJ = 25ºC 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 100 200 VSD - Volts 300 400 500 600 700 800 900 1000 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 C iss 10,000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz C oss 1,000 0.1 0.01 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTN90N25L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1,000 1,000 25µs RDS(on) Limit 100 RDS(on) Limit 100 1ms 10ms 10 25µs I D - A m p e re s I D - A m p e re s 100µs 100µs 1ms 10 10ms 100ms TJ = 150ºC TC = 25ºC Single Pulse TJ = 150ºC 100ms TC = 75ºC Single Pulse DC 1 DC 1 1 10 100 VDS - Volts © 2016 IXYS CORPORATION, All Rights Reserved 1000 1 10 100 1000 VDS - Volts IXYS REF: T_90N25L2(9R)01-20-09-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.