IXTN90P20P

IXTN90P20P PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = =  D RDS(on) S miniBLOC E153432 - 200V - 90A  44m G S S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 200 V VDGR TJ = 25C to 150C, RGS = 1M - 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 90 A IDM TC = 25C, Pulse Width Limited by TJM - 270 A IA EAS TC = 25C TC = 25C - 90 3.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features  International Standard Package miniBLOC, with Aluminium Nitride Isolation  Rugged PolarPTM Process  Avalanche Rated  Low Package Inductance  Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 200 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved Applications V - 4.5 V 100 nA TJ = 125C Easy to Mount Space Savings High Power Density - 50 A - 250 A      High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 44 m DS99934D(6/16) IXTN90P20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz tr td(off) tf 12 nF pF 250 pF 32 ns 60 ns 89 ns 28 ns 205 nC 45 nC 80 nC Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25 RG = 1 (External) Qg(on) Qgs S 2210 Crss td(on) 51 VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC SOT-227B (IXTN) Outline (M4 screws (4x) supplied) 0.14C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. - 90 A Repetitive, Pulse Width Limited by TJM - 360 A IF = - 45A, VGS = 0V, Note 1 - 3.2 V IF = - 45A, -di/dt = -150A/s VR = -100V, VGS = 0V 315 ns 6.6 C - 42 A 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN90P20P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -90 -240 VGS = -10V - 9V - 8V -80 VGS = -10V - 9V -200 -70 - 8V - 7V -160 ID - Amperes ID - Amperes -60 -50 - 6V -40 -120 -30 - 7V -80 -20 - 5V - 6V -40 - 5V -10 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -10 -20 -25 -30 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 45A Value vs. Junction Temperature 2.4 VGS = -10V - 9V - 8V -80 VGS = -10V 2.0 -70 R DS(on) - Normalized - 7V -60 -50 - 6V -40 -30 I D = - 90A 1.6 I D = - 45A 1.2 -20 0.8 - 5V -10 0 0.4 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 45A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 -100 2.4 -90 VGS = -10V TJ = 125ºC 2.2 -80 -70 2.0 ID - Amperes R DS(on) - Normalized -15 VDS - Volts -90 ID - Amperes -5 VDS - Volts 1.8 1.6 1.4 -60 -50 -40 -30 1.2 -20 TJ = 25ºC 1.0 -10 0 0.8 0 -30 -60 -90 -120 -150 ID - Amperes © 2016 IXYS CORPORATION, All Rights Reserved -180 -210 -240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTN90P20P Fig. 8. Transconductance Fig. 7. Input Admittance 100 -120 TJ = - 40ºC 25ºC 125ºC -100 80 70 g f s - Siemens -80 ID - Amperes TJ = - 40ºC 90 -60 -40 25ºC 60 50 125ºC 40 30 20 -20 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -80 -100 -120 -140 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -270 -10 -240 -9 -210 -8 VDS = -100V I D = - 45A VGS - Volts -180 IS - Amperes I G = -1mA -7 -150 -120 TJ = 125ºC -90 -6 -5 -4 -3 TJ = 25ºC -60 -2 -30 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 20 40 80 100 120 140 160 180 200 220 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 1,000 100,000 TJ = 150ºC f = 1MHz RDS(on) Limit TC = 25ºC Single Pulse Ciss 25µs - 100 10,000 100µs ID - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs VSD - Volts Coss 1ms - 10 1,000 Crss 10ms DC 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 100ms - 100 VDS - Volts - 1000 IXTN90P20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P20P(B9)03-25-09-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.