IXTP02N120P

IXTY02N120P IXTP02N120P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.2A  75  TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 0.2 A IDM TC = 25C, Pulse Width Limited by TJM 0.6 A TO-220 (IXTP) IA TC = 25C 0.2 A EAS TC = 25C 40 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 33 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 0.35 3.00 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-220 GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 100μA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 4.0 V 50 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Laser Drivers Igniters, RF Generators  Robotics and Servo Controls  1 A 25 A 75  DS100201B(8/17) IXTY02N120P IXTP02N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 0.12 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.20 S 104 pF 8.6 pF 1.9 pF 6 ns 10 ns 21 ns 39 ns 4.70 nC 0.37 nC 3.20 nC A E b3 4 c2 L3 A1 L4 1 2 A2 3 L1 L b2 e e1 e1 H 1 - Gate 2,4 - Drain 3 - Source c L2 0 5.55MIN OPTIONAL 6.50MIN 4 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION 3.8 C/W RthJC RthCS TO-252 AA Outline A TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 0.2 A ISM Repetitive, Pulse Width Limited by TJM 0.8 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IRM QRM TO-220 Outline E A oP A1 H1 Q D2 D 1.6 3.5 2.8 IF = 0.2A, -di/dt = 100A/μs, VR = 100V μs A μC D1 E1 A2 EJECTOR PIN L1 L e 3X b c e1 Note 1. Pulse test, t  300s, duty cycle, d 2%. 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY02N120P IXTP02N120P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 200 VGS = 10V 7V 6V 180 160 800 140 120 VGS = 10V 8V 7V 900 I D - MilliAmperes I D - MilliAmperes 1000 5V 100 80 60 700 6V 600 500 400 5V 300 4V 40 200 20 4V 100 3V 0 0 0 2 4 6 8 10 12 14 0 50 100 150 VDS - Volts 250 300 350 Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.0 200 VGS = 10V 7V 180 200 VDS - Volts VGS = 10V 2.6 RDS(on) - Normalized I D - MilliAmperes 160 6V 140 120 100 5V 80 60 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 40 20 0.6 4V 0 0.2 0 5.0 5 10 15 20 25 -50 30 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 200 VGS = 10V 4.5 -25 VDS - Volts 160 o TJ = 125 C 3.5 I D - MilliAmperes RDS(on) - Normalized 4.0 3.0 2.5 2.0 o TJ = 25 C 1.5 120 80 40 1.0 0.5 0 0 100 200 300 400 500 600 I D - MilliAmperes © 2017 IXYS CORPORATION, All Rights Reserved 700 800 900 1000 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY02N120P IXTP02N120P Fig. 8. Transconductance 400 300 350 o TJ = - 40 C 300 250 g f s - MilliSiemens I D - MilliAmperes Fig. 7. Input Admittance 350 200 o TJ = 125 C 150 o 25 C o - 40 C 100 o 25 C 250 o 125 C 200 150 100 50 50 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 350 Fig. 10. Gate Charge 800 10 700 9 VDS = 600V I D = 100mA 8 600 I G = 1mA 7 500 V GS - Volts I S - MilliAmperes 150 I D - MilliAmperes 400 300 6 5 4 o TJ = 125 C 3 200 o 2 TJ = 25 C 100 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10 C iss 100 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz C oss 10 1 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_02N120P(F2) 10-01-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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