IXTP05N100M

High Voltage MOSFET IXTP05N100M VDSS ID25 RDS(on) (Electrically Isolated Tab) = 1000V = 700mA Ω ≤ 17Ω N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXTP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ VGSS VGSM 1000 1000 V V Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 700 3 mA A IA EAS TC = 25°C TC = 25°C 1 100 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 3 V/ns PD TC = 25°C 25 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight G Isolated Tab D S G = Gate S = Source D = Drain Features Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 25μA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 375mA, Note 1 V 4.5 Easy to mount Space savings High power density V ±100 nA 25 μA 500 μA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 15 17 Ω DS100014A(08/08) IXTP05N100M Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20V, ID = 500mA, Note 1 0.55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 0.93 S 260 pF 22 pF 8 pF td(on) Resistive Switching Times 11 ns tr VGS = 10V, VDS = 0.5 19 ns td(off) RG = 47Ω (External) 40 ns tf 28 ns Qg(on) 7.8 nC 1.4 nC 4.1 nC Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 1A VDSS, ID = 1A Qgd 5.0 °C/W RthJC Source-Drain Diode ISOLATED TO-220 (IXTP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 750mA, -di/dt = 100A/μs, VR = 100V, VGS = 0V 710 750 mA 3 A 1.5 V ns Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP05N100M Fig. 1. Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 0.9 1.6 VGS = 10V 8V 1.4 0.7 1.2 ID - Amperes 7V ID - Amperes VGS = 10V 7V 6V 0.8 1.0 6V 0.8 0.6 0.6 5.5V 0.5 0.4 0.3 5.5V 0.4 5V 0.2 5V 0.2 0.1 4.5V 0.0 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 VDS - Volts 10 12 14 16 Fig. 3. RDS(on) Normalized to ID = 375mA Value vs. Junction Temperature 20 22 24 26 28 30 Fig. 4. RDS(on) Normalized to ID = 375mA Value vs. Drain Current 3.0 2.6 2.8 VGS = 10V VGS = 10V 2.4 TJ = 125ºC 2.6 2.4 RDS(on) - Normalized RDS(on) - Normalized 18 VDS - Volts 2.2 2.0 I D = 750mA 1.8 1.6 I D = 375mA 1.4 1.2 1.0 2.2 2.0 1.8 1.6 1.4 1.2 0.8 TJ = 25ºC 1.0 0.6 0.8 0.4 -50 -25 0 25 50 75 100 125 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.1 0.8 1.0 0.7 0.9 0.8 ID - Amperes ID - Amperes 0.6 0.5 0.4 0.3 0.7 0.6 0.5 TJ = 125ºC 25ºC - 40ºC 0.4 0.3 0.2 0.2 0.1 0.1 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 100 125 150 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTP05N100M Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 1.6 2.4 TJ = - 40ºC 2.2 1.4 2.0 1.8 25ºC IS - Amperes g f s - Siemens 1.2 1.0 125ºC 0.8 0.6 1.6 1.4 1.2 1.0 0.8 0.4 TJ = 125ºC 0.6 TJ = 25ºC 0.4 0.2 0.2 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.4 0.45 0.5 0.55 ID - Amperes 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10 1,000 f = 1 MHz VDS = 500V 9 I D = 1A 8 Capacitance - PicoFarads I G = 1mA VGS - Volts 7 6 5 4 3 Ciss 100 Coss 10 Crss 2 1 1 0 0 1 2 3 4 5 6 7 0 8 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10.0 1.0 0.1 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_05N100M(1T)7-29-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.