IXTP05N100P

IXTA05N100P IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 0.5A  30  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1000 1000 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 0.5 1.25 A A IA EAS TC = 25C TC = 25C 0.5 50 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 50 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Md Mounting Force (TO-263) Mounting Torque ( TO-220) Weight TO-263 TO-220 G S D (Tab) TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 50μA 2.0 IGSS  V  4.0 V VGS =  20V, VDS = 0V  50 nA IDSS VDS = VDSS, VGS = 0V 10 750 A μA  RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 30   TJ = 125C 24 Applications    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100272B(6/18) IXTA05N100P IXTP05N100P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 0.5 • ID25, Note 1 0.24 Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 50V, ID = 0.5 • ID25 td(off) RG = 30 (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 0.40 S 196 pF 15 pF 4 pF 6 ns 15 ns 20 ns 15 ns 8.1 nC 0.7 nC 4.2 nC 2.5 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 0.5 A ISM Repetitive, Pulse Width Limited by TJM 2.0 A VSD IF = IS, VGS = 0V, Note 1 1.2 V trr IF = 0.5A, -di/dt = 100A/s VR = 100V, VGS = 0V Note 1. 750 ns Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA05N100P IXTP05N100P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 1 0.5 VGS = 10V 7V 0.8 0.4 6V 0.7 I D - Amperes I D - Amperes VGS = 10V 7V 0.9 0.3 5V 0.2 6V 0.6 0.5 0.4 5V 0.3 0.1 0.2 0.1 4V 0 4V 0 0 2 4 6 8 10 12 14 16 0 5 10 VDS - Volts 20 25 30 35 Fig. 4. RDS(on) Normalized to ID = 0.25A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.0 0.5 VGS = 10V 7V 0.4 6V 5V 0.3 0.2 0.1 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 15 VDS - Volts 4V 2.2 I D = 0.50A 1.8 I D = 0.25A 1.4 1.0 0.6 0 0.2 0 5 10 15 20 25 30 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 0.25A Value vs. Drain Current 2.6 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature 0.6 VGS = 10V 2.4 o 0.5 TJ = 125 C 0.4 2.0 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 o TJ = 25 C 1.4 0.3 0.2 1.2 0.1 1.0 0.8 0 0 0.1 0.2 0.3 0.4 0.5 0.6 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 0.7 0.8 0.9 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA05N100P IXTP05N100P Fig. 8. Transconductance Fig. 7. Input Admittance 0.8 0.8 0.7 0.7 0.6 0.6 o g f s - Siemens I D - Amperes TJ = - 40 C 0.5 0.4 o TJ = 125 C o 25 C o - 40 C 0.3 0.5 0.4 o 125 C 0.3 0.2 0.2 0.1 0.1 0 o 25 C 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 0.1 0.2 0.3 VGS - Volts 10 1.8 9 1.6 8 1.4 7 1.2 6 VGS - Volts I S - Amperes 0.5 0.6 0.7 0.8 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 2 1 0.8 o TJ = 125 C 0.6 0.4 I D - Amperes VDS = 500V I D = 0.25A I G = 1mA 5 4 3 o TJ = 25 C 0.4 2 1 0.2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 VSD - Volts 3 4 5 6 7 8 9 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10 1,000 RDS(on) Limit Ciss 100 1 100μs I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1ms 0.1 10 10ms o TJ = 150 C DC o TC = 25 C Single Pulse Crss 1 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXTA05N100P IXTP05N100P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_05N100P (N1)7-22-10 IXTA05N100P IXTP05N100P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.