IXTP08N100P

IXTY08N100P IXTA08N100P IXTP08N100P PolarTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 0.8A  20  N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 0.8 A IDM TC = 25C, Pulse Width Limited by TJM 1.5 A IA TC = 25C 0.8 A EAS TC = 25C 80 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 42 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXTP) GD G = Gate S = Source      BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 50μA 2.0 4.0 D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Characteristic Values Min. Typ. Max. D (Tab) Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S  High Power Density Easy to Mount Space Savings V Applications V  DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Lasers Driverserators  Robotics and Servo Controls  IGSS VGS = 20V, VDS = 0V 50 nA IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 3 A 100 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 17 20  DS99865D(8/17) IXTY08N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 30V, ID = 0.5 • ID25, Note 1 0.35 0.60 S 240 pF 18 pF 3.6 pF 11.3 nC 1.7 nC 6.7 nC 19 ns 37 ns 35 ns 34 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) 3.0 C/W RthJC RthCS IXTA08N100P IXTP08N100P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 0.8 A ISM Repetitive, Pulse Width Limited by TJM 2.4 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 0.8A, -di/dt = 100A/μs, VR = 100V 750 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY08N100P o Fig. 2. Extended Output Characteristics @ TJ = 25 C o Fig. 1. Output Characteristics @ TJ = 25 C 1.2 0.8 VGS = 10V 7V 0.7 IXTA08N100P IXTP08N100P VGS = 10V 7V 1.0 0.5 I D - Amperes I D - Amperes 0.6 6V 0.4 0.3 0.8 6V 0.6 0.4 0.2 5V 0.2 5V 0.1 0 0.0 0 2 4 6 8 10 12 14 16 18 0 5 10 VDS - Volts 25 30 35 3.0 0.8 VGS = 10V 7V 0.6 6V 0.5 0.4 0.3 5V 0.2 VGS = 10V 2.6 RDS(on) - Normalized 0.7 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 0.4A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.2 I D = 0.8A 1.8 I D = 0.4A 1.4 1.0 0.6 0.1 0 0.2 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 0.9 VGS = 10V 2.4 0.8 o TJ = 125 C 2.2 0.7 2.0 0.6 I D - Amperes RDS(on) - Normalized 15 VDS - Volts 1.8 1.6 o 0.4 0.3 TJ = 25 C 1.4 0.5 1.2 0.2 1.0 0.1 0 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY08N100P Fig. 7. Input Admittance IXTA08N100P IXTP08N100P Fig. 8. Transconductance 0.9 1.0 0.8 0.9 o VDS = 30V 0.8 0.7 o 0.7 0.6 o g f s - Siemens I D - Amperes TJ = - 40 C VDS = 30V TJ = 125 C o 25 C o - 40 C 0.5 0.4 0.3 25 C 0.6 o 125 C 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0.0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 0.1 0.2 0.3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 0.5 0.6 0.7 0.8 0.9 Fig. 10. Gate Charge 2.4 10 9 2.0 VDS = 500V I D = 0.4A 8 I G = 1mA 7 1.6 VGS - Volts I S - Amperes 0.4 I D - Amperes 1.2 o TJ = 125 C 0.8 6 5 4 3 o TJ = 25 C 2 0.4 1 0.0 0 0.4 0.5 0.6 0.7 0.8 0 0.9 1 2 VSD - Volts 4 5 6 7 8 9 10 11 12 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10 1,000 f = 1MHz Capacitance - PicoFarads 3 Ciss Z(th)JC - K / W 100 Coss 1 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTY08N100P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source L2 3 b2 A1 6.40 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION © 2017 IXYS CORPORATION, All Rights Reserved A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW 2 E D1 D H IXTA08N100P IXTP08N100P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS REF: T_08N100P(1A-444) 4-02-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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