IXTP100N04T2

IXTA100N04T2 IXTP100N04T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 40V 100A  7m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 100 300 A A IA TC = 25C 50 A EAS TC = 25C 300 mJ PD TC = 25C 150 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1 & 2  V Applications 4.0 V             100 nA 2 A 50 A 7 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS99972A(7/18) IXTA100N04T2 IXTP100N04T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 VDS = 10V, ID = 50A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 20V, ID = 50A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd E 45 S 2690 pF 490 pF 105 pF 12.0 ns 5.2 ns 15.8 ns 6.4 ns 25.5 nC 8.0 nC 5.7 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 1.00 C/W RthJC RthCS TO-263 Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD trr IRM QRM IF = 50A, VGS = 0V, Note 1 1.2 IF = 50A, VGS = 0V, -di/dt = 100A/s, VR = 20V TO-220 Outline E A oP A1 V 34 ns 1.44 A 24.5 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA100N04T2 IXTP100N04T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 350 VGS = 15V 10V 9V 90 80 VGS = 15V 70 60 50 6V 40 10V 250 7V I D - Amperes I D - Amperes 300 8V 30 9V 200 8V 150 100 7V 50 6V 20 5V 10 0 5V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 4 VDS - Volts 100 2.2 VGS = 15V 10V 9V 80 8 9 10 1.8 RDS(on) - Normalized I D - Amperes 7 VGS = 10V 2.0 8V 70 7V 60 50 6V 40 30 I D = 100A 1.6 I D = 50A 1.4 1.2 1.0 5V 20 0.8 10 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current 2.6 Fig. 6. Drain Current vs. Case Temperature 120 VGS = 10V 15V 2.4 2.2 100 o TJ = 175 C 2.0 80 I D - Amperes RDS(on) - Normalized 6 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 90 5 VDS - Volts 1.8 1.6 1.4 60 40 1.2 o TJ = 25 C 1.0 20 0.8 0.6 0 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA100N04T2 IXTP100N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 o 60 VDS = 10V 80 TJ = - 40 C VDS = 10V 50 o g f s - Siemens I D - Amperes 25 C 60 40 o TJ = 150 C 40 o 20 o 25 C o - 40 C 20 150 C 30 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 VGS - Volts 60 70 80 90 100 110 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 20V 9 250 I D = 50A 8 I G = 10mA 7 V GS - Volts 200 I S - Amperes 50 I D - Amperes 150 100 6 5 4 3 o TJ = 150 C 2 o 50 TJ = 25 C 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 VSD - Volts 10 12 14 16 18 20 22 24 26 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10,000 RDS(on) Limit Ciss 25μs 100 1,000 I D - Amperes Capacitance - PicoFarads 8 Coss 100μs 1ms 10 100 Crss 10ms 100ms o TJ = 175 C o TC = 25 C Single Pulse f = 1 MHz DC 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA100N04T2 IXTP100N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 6.5 7.0 VDS = 20V t r - Nanoseconds t r - Nanoseconds 5.0 I D = 100A 4.0 VDS = 20V 6.0 5.5 4.5 RG = 5Ω , VGS = 10V 6.5 RG = 5Ω , VGS = 10V 6.0 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current I D = 50A o TJ = 125 C 5.5 5.0 4.5 4.0 o 3.5 TJ = 25 C 3.5 3.0 3.0 2.5 2.5 25 35 45 55 65 75 85 95 105 115 20 125 30 40 50 TJ - Degrees Centigrade td(off) 15 o 100 td(off) RG = 5Ω, VGS = 10V 13 21 VDS = 20V VDS = 20V 13 I D = 50A, 100A 5.0 12 4.5 11 11 19 I D = 100A 9 17 I D = 50A 7 15 t d(off) - Nanoseconds 14 5.5 90 23 tf TJ = 125 C, VGS = 10V 6.0 80 15 t d(on) - Nanoseconds t r - Nanoseconds 16 t f - Nanoseconds tf 6.5 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 7.0 60 I D - Amperes I D = 100A 4.0 5 10 3.5 3 9 4 6 8 10 12 14 16 18 13 25 20 35 45 55 RG - Ohms 20 tf td(off) 28 80 26 70 20 o TJ = 125 C 10 18 8 16 6 14 o TJ = 25 C 4 2 50 60 115 11 125 70 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 80 90 80 tf td(off) 70 o VDS = 20V 60 t f - Nanoseconds 12 40 105 60 50 50 I D = 50A 40 40 30 30 I D = 100A 20 20 12 10 10 10 100 0 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 22 t d(off) - Nanoseconds t f - Nanoseconds VDS = 20V 30 95 TJ = 125 C, VGS = 10V 24 14 20 85 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 5Ω, VGS = 10V 16 75 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 18 65 IXTA100N04T2 IXTP100N04T2 Fig. 19. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_100N04T2 (V2) 7-9-18-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.