IXTP10N60PM

Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS(on) (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±30 ±40 V V OVERMOLDED TO-220 (IXTP...M) OUTLINE G ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C dv/dt PD 5 30 A A 10 20 500 A mJ mJ IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns TC = 25°C 50 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque z z z 1.13/10 Nm/lb.in. Weight 4 D = Drain Features z TL TSOLD Isolated Tab DS Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect g Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 100μA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 5 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved z z Easy to mount Space savings High power density V 5.0 V ±100 nA 5 50 μA μA 740 m Ω DS99450E(04/06) IXTP 10N60PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 5 A, pulse test 6 Ciss 11 S 1610 pF 165 pF Crss 14 pF td(on) 20 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 24 ns td(off) RG = 10 Ω (External) 55 ns 18 ns tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 5 A Qgd 32 nC 11 nC 10 nC RthJS 2.5 Source-Drain Diode °C/W ISOLATED TO-220 (IXTP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 10 A ISM Repetitive 30 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 9 A, -di/dt = 100 A/μs VR = 100V 500 ns PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.